Electrical properties of thermally evaporated tellurium films

Phahle, A.M.

doi:10.1016/0040-6090(77)90408-4

Cited by 47 publications

(10 citation statements)

References 12 publications

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“…As the SnSe films are found to be p-type [5,211, the observed behaviour together with the frequency dependence of conductivity suggests that the frequency dependence of conductivity is a general feature of hopping systems [22]. Also the polycrystalline nature of the film and the other crystallographic defects may provide additional acceptor centres as in the case of tellurium films [23]. The values of the activation energy increase with increasing film thickness ( Table 2), which is contrary to what is generally observed in polycrystalline films.…”

Section: Ac Conductionmentioning

confidence: 99%

Structure, Composition, Dielectric, and AC Conduction Studies on Tin Selenide Films

Suguna¹,

Mangalaraj²,

Narayandass³

et al. 1996

Phys. Stat. Sol. (a)

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Al‐SnSe‐Al thin film capacitors were fabricated onto well cleaned glass substrates by thermal evaporation under a pressure of 2 mPa. Multiple beam interferometry (MBI) was used to measure the thicknesses of the SnSe films. The composition and structure of SnxSe1‐x films were analysed using Rutherford backscattering spectrometry and X‐ray diffractogram, respectively. The capacitor samples were stabilised by aging and annealing. The variations of the dielectric constant and loss as a function of frequency at different temperatures were observed and the results are discussed. AC conduction studies reveal that the conduction mechanism is due to hopping of holes. The activation energies were also calculated.

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Section: Ac Conductionmentioning

confidence: 99%

Structure, Composition, Dielectric, and AC Conduction Studies on Tin Selenide Films

Suguna¹,

Mangalaraj²,

Narayandass³

et al. 1996

Phys. Stat. Sol. (a)

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“…The density of those localised is estimated to 10 From Figure 2, it is found that in the region of 2xlO 5 Hz to 1MHz an increase in conductance with frequency occurs. The frequency variation of AC conductance G., can be written in a nearly linear form: (2) where Gdc is the DC conductance (it is generally smaller than G..), f is the applied frequency, and A is a complex constant. The index s takes on a value close to unity.…”

Section: Resultsmentioning

confidence: 99%

“…Polycrystalline tellurium films are known to exhibit some anomalous behaviour with regard to the dependence of carrier-concentration on temperature [2]. According to ordinary semiconductor theory, the concentration of carriers increases while their mobility decreases with the rise of temperature.…”

Section: Introductionmentioning

confidence: 99%

Characterisation of Polycrystalline thin Films of Tellurium

1992

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Structural, electrical and optical characterisations were performed on tellurium film deposited under high vacuum conditions on ultrasonically cleaned Coming glass 7059 substrates. SEM and TEM studies reveal the polycrystalline nature of deposited tellurium films. At steady state high field conditions, space charge limited conduction is believed to have occurred due to the existence of a fast decaying density of trapping states in the energy gap. The DC conductivity is believed to exhibit a TV' 4 law dependence below room temperature, giving a value of 2x10-1 6 eV/m 3 for conduction states close to the Fermi level. From the power law dependence on frequency of AC conductivity, the barrier for bipolaron hopping is estimated to 0.33eV. Optical absorption in 9nm thick tellurium samples is due to direct transitions both allowed and forbidden producing two edges, the first one at 4eV and the other at about 0.5eV, respectively.

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“…Also, it indicates that the numbers of traps having lower energies are more than those having higher energy values and hence, the ac conductivity at higher frequency is estimated to be more. Also the polycrystalline nature of the film and the other crystallographic defects may provide additional acceptor centres [24]. The activation energy exhibit to 6 decrease with increasing of thickness and frequency which is listed in Table 3.…”

Section: Ac Conductivitymentioning

confidence: 97%

X- ray diffraction and dielectric properties of PbSe thin films

Hasan¹

2019

IJP

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Lead selenide PbSe thin films of different thicknesses (300, 500, and 700 nm) were deposited under vacuum using thermal evaporation method on glass substrates. X-ray diffraction measurements showed that increasing of thickness lead to well crystallize the prepared samples, such that the crystallite size increases while the dislocation density decreases with thickness increasing. A.C conductivity, dielectric constants, and loss tangent are studied as function to thickness, frequency (10kHz-10MHz) and temperatures (293K-493K). The conductivity measurements confirm confirmed that hopping is the mechanism responsible for the conduction process. Increasing of thickness decreases the thermal activation energy estimated from Arhinus equation is found to decrease with thickness increasing. The increase of thickness lead to reduce the polarizability α while the increasing of temperature lead to increase α.

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Electrical properties of thermally evaporated tellurium films

Cited by 47 publications

References 12 publications

Structure, Composition, Dielectric, and AC Conduction Studies on Tin Selenide Films

Structure, Composition, Dielectric, and AC Conduction Studies on Tin Selenide Films

Characterisation of Polycrystalline thin Films of Tellurium

X- ray diffraction and dielectric properties of PbSe thin films

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