Electrical properties of UV photochemically treated CdTe

Single-crystal CdTe was grown with the vapour phase technique. Dice were suitably etched and then annealed in air isochronally at different temperatures (473, 573, 673, and 773 K) for the same period of time (1 h). Schottky barriers were made by vacuum evaporation of gold onto the as-grown CdTe single-crystal substrate as well as onto the isochronally annealed substrates. The physical properties of AuCdTe devices were studied as a function of temperature by electrical methods, such as capacitancevoltage and currentvoltage analysis. The isochronal annealing technique was found to produce a significant change in the electrical properties, such as barrier height, carrier concentration, ideality factor, and forward-bias threshold, of the AuCdTe Schottky diode. The observations are discussed in terms of the various theories of Schottky barrier formation. PACS No.: 73.30ty

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Electrical properties of UV photochemically treated CdTe

Cited by 3 publications

References 26 publications

Effect of isothermal annealing on CdTe and the study of electrical properties of Au–CdTe Schottky barriers

Effect of isothermal annealing on CdTe and the study of electrical properties of Au–CdTe Schottky barriers

Photovoltaic properties of CdTe-Cu2Te

Effect of isochronal annealing on CdTe and the study of electrical properties of AuCdTe Schottky devices

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Electrical properties of UV photochemically treated CdTe

Cited by 3 publications

References 26 publications

Effect of isothermal annealing on CdTe and the study of electrical properties of Au–CdTe Schottky barriers

Effect of isothermal annealing on CdTe and the study of electrical properties of Au–CdTe Schottky barriers

Photovoltaic properties of CdTe-Cu2Te

Effect of isochronal annealing on CdTe and the study of electrical properties of AuCdTe Schottky devices

Contact Info

Product

Resources

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Effect of isochronal annealing on CdTe and the study of electrical properties of AuCdTe Schottky devices