Electrical rectification by selective wave-function coupling in small Ag clusters on<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mtext>Si</mml:mtext><mml:mrow><mml:mo>(</mml:mo><mml:mrow><mml:mn>111</mml:mn></mml:mrow><mml:mo>)</mml:mo></mml:mrow><mml:mtext>−</mml:mtext><mml:mrow><mml:mo>(</mml:mo><mml:mrow><mml:mn>7</mml:mn><mml:mo>×</mml:mo><mml:mn>7</mml:mn></mml:mrow><mml:mo>)</mml:mo></mml:mrow></mml:mrow></mml:math>

Hu, Shuanglin; Zhao, Aidi; Kan, Erjun; Cui, Xuefeng; Zhang, Xieqiu; Ming, Fangfei; Fu, Qiang; Xiang, Hongjun; Yang, Jinlong; Xiao, Xudong

doi:10.1103/physrevb.81.115458

Cited by 11 publications

(7 citation statements)

References 36 publications

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“…This distance is only slightly larger than the height of the Si ad-atoms above Si-1a (∼1.6Å 27 ), which implies that the Ag atoms in the wetting layer are located laterally between the Si ad-atoms within the Si ad-atom layer. This location of the Ag is consistent with low-temperature STM studies which have suggested that Ag adsorbs at high coordination sites between the Si ad-atoms in the case when only one or two Ag atoms occupy a HUC 34,35 , although, in those studies the height was not determined.…”

Section: Discussionsupporting

confidence: 87%

In situx-ray scattering study of Ag island growth on Si(111)7×7

et al. 2016

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We report on the epitaxial relationship between Ag and the Si(111)7x7 substrate where the wetting layer and the emergence of islands was investigated using in situ x-ray scattering with a combination of grazing incidence diffraction, specular reflectivity and crystal truncation rod measurements. The atomic-scale structure of the wetting layer evolves continuously with coverage until a transition where it ceases to change its structure concomitantly with the appearance of islands. The islands are observed to reside on the Si(111)7x7 and, although the minimum average island height is three atomic layers of face-centered cubic Ag, the average island height depends on the coverage and temperature. The majority of the Ag islands are oriented along the symmetry-equivalent Si crystallographic axes and a minority population of islands are rotated by 15.7 • . A coincidence-site lattice model is used to show that kinetic considerations lead to the observed island orientations.

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Section: Discussionsupporting

confidence: 87%

In situx-ray scattering study of Ag island growth on Si(111)7×7

et al. 2016

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“…Other positions do not correspond to the other energy minima. The location of the Ag trimers observed by Hu et al [26] makes this difference plausible (see Ref. [26]).…”

Section: Structural Modelsmentioning

confidence: 95%

“…The location of the Ag trimers observed by Hu al. [26] makes this difference plausible (see Ref. [26]).…”

Section: Structural Modelsmentioning

confidence: 99%

Scanning tunneling microscopy at multiple voltage biases of stable “ring-like” Ag clusters on Si(111)–(7×7)

et al. 2012

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Since more than twenty years it is known that deposition of Ag onto Si(111)-(7 × 7) leads under certain conditions to the formation of so-called "ring-like" clusters, that are particularly stable among small clusters. In order to resolve their still unknown atomic structure, we performed voltage dependent scanning tunneling microscopy (STM) measurements providing interesting information about the electronic properties of clusters which are linked with their atomic structure. Based on a structural model of Au cluster on Si(111)-(7 × 7) and our STM images, we propose an atomic arrangement for the two most stable Ag "ring-like" clusters.

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“…All the clusters exhibit certain degrees of rectification behavior, 31 and, as a consequence, an onset sample bias needs to be applied, above which reasonable current responses can be obtained. For clusters from Ag 3 to Ag 26 , the onset sample bias ranges from +1 V to +2 V. To ensure that all the clusters studied would appear as protrusions, the STM images are taken at a sample bias of +2 V. The influence of the STM tip to the cluster dynamical movements is also examined by varying the sample bias and the tunneling current applied in the measurements, and we conclude that using a sample bias of 2 V and a tunneling current smaller than 100 pA will only bring negligible influence to the movement rate of the clusters.…”

Section: Experiments and Theoretical Calculationmentioning

confidence: 99%

“…[18][19][20][21] For example, Ag or Au clusters on oxide surfaces were found to exhibit high catalytic activity and selectivity for commercially important reactions such as propylene epoxidation 22,23 and CO oxidation. 24,25 In particular, variations in the clusters' configurations 22 and adsorption sites [24][25][26][27] can often influence their catalytic performance, in addition to the demonstrated changes in physical [28][29][30][31] or chemical 22,23 properties by adding/removing just one single atom to/from such clusters. The critical role played by the heterogeneous sites is exemplified by Au clusters on TiO 2 , with the Ti atoms neighboring Au becoming highly catalytic.…”

Section: Introductionmentioning

confidence: 99%

Probing the generalized magicity of Ag nanoclusters constructed on Si(111) by atomic manipulation

et al. 2013

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Using scanning tunneling microscopy supplemented with first-principles calculations, we examine all the thermally activated atomistic processes of Ag n (n = 1-26) constructed atom-by-atom on a Si(111)-(7 × 7) substrate, and we exploit such cluster dynamical information to further determine the energetic stability (or magicity) of the clusters. By generalizing the traditional concept of cluster magicity solely based on cluster association/dissociation to also include various complex collective cluster motions, we identify the existence of two classes of magic clusters. The most stable class, Ag 10 and Ag 25 , is defined by geometrical shell closure; the less stable class of Ag n (n = 3, 5, 13, 16, 19) is associated with lower kinetic barriers against internal restructuring of, or atom detachment from, their respective clusters of neighboring sizes. Our detailed analysis also reveals that the substrate effect, rather than the number of bonds within the clusters, dominates the cluster stabilities. The conceptual advances gained in the present study are broadly applicable to many related cluster systems in contact with external media, and they are expected to be instrumental in tuning the dynamical behaviors of clusters in surface catalysis, nanoplasmonics, and other technological areas.

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Electrical rectification by selective wave-function coupling in small Ag clusters onSi(111)−(7×7)

Cited by 11 publications

References 36 publications

In situx-ray scattering study of Ag island growth on Si(111)7×7

In situx-ray scattering study of Ag island growth on Si(111)7×7

Scanning tunneling microscopy at multiple voltage biases of stable “ring-like” Ag clusters on Si(111)–(7×7)

Probing the generalized magicity of Ag nanoclusters constructed on Si(111) by atomic manipulation

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