Electrical Resistivity and Grain Boundaries in Metals

Nakamichi, I

doi:10.4028/www.scientific.net/msf.207-209.47

Cited by 43 publications

(34 citation statements)

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“…Of all existing GBs, the unique characteristics of the coherent twin GB was pointed out early on [16]. Finally, GB properties such as interfacial energy [17], and most relevant to this work, electrical resistivity [18], were found to systematically depend on the atomic structure. It was concluded that no clear geometric criterion can reliably determine the interfacial energy [17].…”

Section: Introductionmentioning

confidence: 79%

Calculated Resistances of Single Grain Boundaries in Copper

et al. 2014

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The resistance of copper grain boundaries (GBs) is calculated systematically through a full atomistic quantum approach. A set of twin GBs, including the coherent twin GB, is generated by density functional theory (DFT) total energy relaxation starting from the coincidence site lattice (CSL) model. The atomic structure of the GBs is used to construct two-probe transport junctions for quantum-transport analysis by carrying out DFT within the Green's function formalism. The specific resistivity calculated for the coherent twin GB is found to be quantitatively consistent with the available experimental and theoretical data. The specific resistivity and reflection coefficient of other more complex GBs are predicted. The interfacial energy density and specific resistivity are both found to inversely relate with the planar density of coincidence sites. Comparison of our calculated specific resistivities and reflection coefficients with the corresponding GB-averaged experimental quantities shines light on the microstructure of the samples.

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Section: Introductionmentioning

confidence: 79%

Calculated Resistances of Single Grain Boundaries in Copper

et al. 2014

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“…5,7 The intrinsic GB resistivity of Cu is closely related to the GB structures and energy state and can vary from 0.5ϫ 10 −7 to 2.5ϫ 10 −7 n⍀ m 2 with GB misorientations increasing from low to high angles. 2,5,7,15 specific stacking fault resistivity, i.e., 1.5ϫ 10 −8 n⍀ m 2 in Cu, 13 which is much lower than those of conventional GBs. For comparison, literature data for nanocrystalline Cu, ultrafine-grained Cu are also included.…”

mentioning

confidence: 87%

High strength and high electrical conductivity in bulk nanograined Cu embedded with nanoscale twins

Zhang

Tao

et al. 2007

Applied Physics Letters

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A bulk nanograined Cu sample embedded with nanoscale twins is produced by means of dynamic plastic deformation at cryogenic temperatures. It exhibits a tensile yield strength of 610MPa and an electrical conductivity of 95% IACS at room temperature. The unique combination of a high strength and a high conductivity is primarily attributed to the presence of a considerable amount of nanoscale twins which strengthen the material significantly while having a negligible influence on electrical conductivity.

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“…35 A stacking fault consists of two coherent twin interfaces; therefore, the resistivity coefficient of coherent twin interface is typically approximated as one half of the resistivity coefficient of stacking fault. 36 In epitaxial nt Cu films the predominant defects are two types of twin interfaces, the lateral ⌺3͑111͒ and vertical ⌺3͑112͒ interfaces. TEM studies show that grown-in threading dislocation density is rather low.…”

Section: B Electrical Resistivity Of Epitaxial Cu Films With Nanoscamentioning

confidence: 99%

Significant enhancement of the strength-to-resistivity ratio by nanotwins in epitaxial Cu films

Anderoglu¹,

Misra²,

Ronning³

et al. 2009

Journal of Applied Physics

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Epitaxial nanotwinned Cu films, with an average twin spacing ranging from 7 to 16 nm, exhibit a high ratio of strength-to-electrical resistivity, ∼400 MPa(μΩ cm)−1. The hardness of these Cu films approaches 2.8 GPa, and their electrical resistivities are comparable to that of oxygen-free high-conductivity Cu. Compared to high-angle grain boundaries, coherent twin interfaces possess inherently high resistance to the transmission of single dislocations, and yet an order of magnitude lower electron scattering coefficient, determined to be 1.5–5×10−7 μΩ cm2 at room temperature. Analytical studies as well as experimental results show that, in polycrystalline Cu, grain refinement leads to a maximum of the strength-to-resistivity ratio, ∼250 MPa(μΩ cm)−1, when grain size is comparable to the mean-free path of electrons. However, in twinned Cu, such a ratio increases continuously with decreasing twin spacing down to a few nanometers. Hence nanoscale growth twins are more effective to achieve a higher strength-to-resistivity ratio than high-angle grain boundaries.

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Electrical Resistivity and Grain Boundaries in Metals

Cited by 43 publications

References 0 publications

Calculated Resistances of Single Grain Boundaries in Copper

Calculated Resistances of Single Grain Boundaries in Copper

High strength and high electrical conductivity in bulk nanograined Cu embedded with nanoscale twins

Significant enhancement of the strength-to-resistivity ratio by nanotwins in epitaxial Cu films

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