Electrical resistivity and thermopower of liquid Ge and Si

Schnyders, H. S.; Zytveld, J B Van

doi:10.1088/0953-8984/8/50/013

Cited by 54 publications

(40 citation statements)

References 24 publications

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“…The obtained values (figure) exhibit the same order of magnitude as specific electrical conductivities of melts of these elements at ambient pressure [3].…”

supporting

confidence: 57%

On electrical conductivity of melts of boron and its compounds under pressure

Mukhanov

Solozhenko

2015

J. Superhard Mater.

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OOn n e el le ec ct tr ri ic ca al l c co on nd du uc ct ti iv vi it ty y o of f m me el lt ts s o of f b bo or ro on n a an nd d i it ts s c co om mp po ou un nd ds s u un nd de er r p pr re es ss su ur re e Vladimir A. Mukhanov and Vladimir L. Solozhenko * LSPM-CNRS, Université Paris Nord, 93430 Villetaneuse, FranceThe electrical conductivity of melts of boron and its carbide (B 4 C), nitride (BN), and phosphide (BP) has been studied at pressures to 7.7 GPa and temperatures to 3500 K. It has been shown that these melts are good conductors with specific electrical conductivity values comparable with that of iron melt at ambient pressure.

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“…The obtained values (figure) exhibit the same order of magnitude as specific electrical conductivities of melts of these elements at ambient pressure [3].…”

supporting

confidence: 57%

On electrical conductivity of melts of boron and its compounds under pressure

Mukhanov

Solozhenko

2015

J. Superhard Mater.

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“…At temperatures below the melting point of silicon the overall electric resistance of the JIC specimen is almost the same as that of Mo thin-film, since the resistance of solid-phases is much larger than that of Mo thin-film. At temperatures where silicon starts to melt, the dramatically reduced resistance of liquid-phase silicon 16 must be considered to estimate the overall resistance of the specimen. Here, the compensation for the reduced overall resistance to estimate the experimental resistance has not been included, since this drop is one of evidences for the existence of liquid-phase silicon during the JIC process under the shorter pulse input condition.…”

Section: Resultsmentioning

confidence: 99%

Microsecond Crystallization of Amorphous Silicon Films on Glass Substrates by Joule Heating

Hong¹,

2016

ECS J. Solid State Sci. Technol.

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Joule-heating-induced crystallization (JIC) of amorphous silicon (a-Si) films was conducted by applying an electric pulse to a conductive layer located beneath or above the films. Crystallization occurs across the whole substrate surface within few tens of microseconds. The phase-transformation phenomena during the JIC process were detected electrically and optically by the in-situ measurements of input voltage/current and normal reflectance at wavelength of 532 nm. We devised a method for the crystallization of a-Si films while preventing arc generation; this method consisted of pre-patterning an a-Si active layer into islands and then depositing a gate oxide and gate electrode. Electric pulsing was then applied to the gate electrode formed using a Mo layer. JICprocessed poly-Si thin-film transistors were fabricated successfully, and the proposed method was found to be compatible with the standard processing of coplanar top-gate poly-Si TFTs. The p-channel JIC poly-Si TFT with W/L = 7 μm/7 μm exhibited a field effect mobility of 38.9 cm 2 /V-s, a threshold voltage of −2. Low-temperature polycrystalline silicon (LTPS) is a crucial active layer material for polycrystalline silicon thin-film transistors (poly-Si TFTs) on thermally susceptible glass substrates. LTPS-TFT backplanes are required for fabricating flat panel displays such as active-matrix liquid displays and active-matrix organic light-emitting displays (AMOLEDs).1-5 LTPS-TFT backplanes are strongly preferred to amorphous silicon (a-Si)-TFT ones since several devices, AMOLEDs in particular, operate in a current-driven mode.6,7 Methods used for forming LTPS include solid-phase crystallization (SPC), 8,9 metal-induced crystallization, 10 and excimer laser crystallization. 11Sameshima et al. were the first to report Joule heating crystallization carried out using Cr strips as heating sources in order to rapidly crystallize silicon films.12 They crystallized 50-nm-thick a-Si films via 200-nm-thick SiO 2 intermediate layers by applying an electric field to Cr strips with a power density of ∼10 5 W/cm 2 . Extending this concept further, we have developed a crystallization method for a-Si films called Joule-heating-induced crystallization (JIC). [13][14][15] In this method, an electric field is applied to a conductive layer above or beneath a-Si films to induce Joule heating that in turn leads to crystallization of the films. The film temperature in this method is more uniform than that achieved using other conventional heating methods since the Joule heat is generated uniformly throughout the conductive layer. The optimum processing windows for the JIC process strongly depend on the power density (W/cm 2 ) and pulsing time applied during the process. These process parameters determine the heating rate as well as the depth of thermal penetration from the Joule-heat source. During electrical pulsing the maximum temperature depends on power density and pulsing time. As the power density increases the heating rate increases. Thus in order to obtain a given crysta...

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“…Historically, thermal conductivity has been estimated from the measurement of electrical conductivity χ and applying the Wiedemann-Franz law, as shown in Eq. (4.2) [5,8,52,53]. Thermal diffusivity was measured also by a laser flash method [7,24,54] and is converted into thermal conductivity using density ρ and mass heat capacity C mass p .…”

Section: Thermal Conductivitymentioning

confidence: 99%

“…(4.2). Glazov et al [5], Schnyders and Zytveld [52], and Sasaki et al [8] measured electrical conductivity using a four-probe method. Figure 4.22 shows a typical measurement cell for the four-probe method, where resistivity, which is the inverse of electrical conductivity, is measured [8].…”

Section: Electrical Conductivitymentioning

confidence: 99%

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Thermophysical Properties of Molten Silicon

Hibiya

Fukuyama

Tsukada

et al. 2008

Crystal Growth Technology

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IntroductionModern society features information processing on a large scale and is supported by information technologies, which require high-speed data processing and high-speed data transmission. From the viewpoint of materials science and engineering, this is supported by high-quality semiconductor crystals, produced from high-temperature melt processes, such as the Czochralski, the floating zone, Bridgman processes, and so on. In order to understand and control these high-temperature processes, computer modeling is one of the superior tools available. This shows us the physics of these processes and how to improve processes and products, as shown in Fig. 4.1 [1]. This has been made possible thanks to the year-by-year improvements in computer performance, and even turbulence flow can now be handled. In modeling equations for continuity, momentum, energy and the Maxwell equation are solved simultaneously. In order to calculate temperature, flow and pressure fields of a high-temperature process, the thermophysical properties of the molten state in particular are indispensable. A survey was carried out on the required thermophysical properties for silicon crystal growth processes and on thermophysical properties actually employed in modeling in Japan: see Fig. 4.2 and Table 4.1 [2][3][4]. Table 4.1 shows thermophysical properties employed in 44 papers. The scatter of the data is rather large; particularly for the temperature coefficient of surface tension, the difference is one order of magnitude. Historically, Glazov et al. [5] reviewed thermophysical properties of molten semiconductors not only for molten silicon but also for other compound molten semiconductors. However, modern society requires the development of new measurement techniques and improvements in the accuracy and precision of data. Iida and Guthrie [6] overviewed thermophysical properties of molten metals and methods for measurements; this is a good textbook for thermophysical property measurement of high-temperature melts. Figure 4.2 shows that thermal conductivity, specific heat capacity and surface tension are urgently required. Although thermal conductivity is required to calculate heat balance at the solid/liquid interface during crystal growth and is important to Crystal Growth Technology. Edited by Hans J. Scheel and Peter Capper

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Electrical resistivity and thermopower of liquid Ge and Si

Cited by 54 publications

References 24 publications

On electrical conductivity of melts of boron and its compounds under pressure

On electrical conductivity of melts of boron and its compounds under pressure

Microsecond Crystallization of Amorphous Silicon Films on Glass Substrates by Joule Heating

Thermophysical Properties of Molten Silicon

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