Ion beam induced deposition is a novel method of thin film growth in which adsorbed, metal-bearing molecules are decomposed by incident energetic ions thus leaving a deposit. In conjunction with finely focused ion beams this process is used in microelectronics for local repair, i.e., deposition of patches of metal film with better than 0.1 μm resolution. Each ion can decompose as many as 40–50 adsorbed molecules. The fundamental aspects of this process, namely how is the energy of the ion transferred to adsorbed molecules over a radius of up to 5 nm, have been studied. The decomposition yield (number of molecules decomposed/ion) was measured for Ne, Ar, Kr, and Xe ions at 50 and 100 keV. A model based on trim calculations was developed. The data correlate with this model confirming the view that collision cascades which can provide energy to surface atoms over a substantial area are responsible for ion beam induced deposition.

Solid phase crystallization (SPC) of amorphous silicon films grown by low pressure chemical vapor deposition was conducted using a tube furnace in nitrogen ambient at temperatures ranging from 560 C to 1000 C. The transformed crystalline fraction shows typical sigmoidal curves as a function of annealing time using Raman analysis adopted in this work. Arrhenius plot of the measured incubation time does not fit to the straight line since SPC kinetics has strong temperature dependence and since the heating rate is slow when using a conventional heating method. The grain size decreases as the annealing temperature increases. It, however, is not sensitive to the annealing temperature beyond 800 C, since SPC kinetics is complete during the period of heatingup according to Raman spectroscopy. It was observed that doping of impurity atoms affect the crystallization kinetics. V C 2013 AIP Publishing LLC. [http://dx.

Focused ion beam fabrication of metallic nanostructures on end faces of optical fibers for chemical sensing applications J.Surface plasmon polariton modes in a single-crystal Au nanoresonator fabricated using focused-ion-beam milling Appl. Phys. Lett. 92, 083110 (2008); 10.1063/1.2885344Mechanical property evaluation of Au-coated nanospring fabricated by combination of focused-ion-beam chemical vapor deposition and sputter coating Because of their ability to both mill and deposit material with submicron resolution, focused ion beams are now used to repair photolithography masks and are of increasing technological interest in the repair of x-ray lithography masks and in integrated circuit restructuring. With the latter two applications in mind, we have fabricated milled and deposited Au features with linewidths of <;0.1 {lm using a 40 keY Ga focused ion beam. In addition, we present the results of a study parameterizing focused ion beam induced Au deposition under conditions of practical interest. Milling is accomplished by simple physical sputtering. Examples of milled microfeatures include a grating with a 210 nm period milled through a 5000 A thick evaporated Au film. Deposition is accomplished by ion bombarding a Si0 2 substrate on which a precursor gas, dimethyl gold hexafluoro acetylacetonate, is continuously being adsorbed. Examples of deposited Au features include a 3 X 3 {lm patch I-{lm-thick with steep sidewalls. The deposition rate was measured at room temperature as a function of ion and precursor flux, and a simple model of the process is fitted to the data. Ion beam induced deposition efficiency is shown to depend critically on the time averaged beam current density and only weakly on the precursor flux. The maximum achievable growth rate is shown to be -10 A/s. Deposited Au films contain 30-60 at. % carbon and have conductivities 200-600 times less than that of bulk Au. Those films formed using lower organometallic pressures or higher ion beam current densities are characterized by greater purity with more continuous microstructure.

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Focused ion beam induced deposition of gold microfeatures is accomplished by 40 keV Ga+ bombardment of a substrate on which dimethyl gold hexafluoro acetylacetonate is continuously adsorbed. Under optimum conditions, deposition rates exceeding 11 Å/s have been achieved as well as high aspect ratio features, linewidths of approximately 0.1.μm, and resistivities of 500—1500 μΩcm. The microstructure, composition, and yield of the deposits have been examined as a function of various process parameters. Improved film growth and purity are observed in deposits made with lower organometallic pressures or higher current densities.