Millisecond crystallization of amorphous silicon films by Joule-heating induced crystallization using a conductive layer

Hong, Won-Eui; Ro, Jae-Sang

doi:10.1016/j.tsf.2007.01.028

Cited by 25 publications

(13 citation statements)

References 12 publications

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“…The electric field through the conducting thin films can therefore be used to induce surface morphological changes in a thin metal film. Accelerated crystallization has been reported when a dc field is applied in conjunction with heating 25–28. This is attributable to the very high temperature generated due to Joule heating causing thermal migration of particles and their agglomeration.…”

Section: Resultsmentioning

confidence: 99%

A comparative study of laser‐ and electric‐field‐induced effects on the crystallinity, surface morphology and plasmon resonance of indium and gold thin films

Kumar

Krishna

2010

Physica Status Solidi (a)

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The effects of post-deposition treatment of In and Au thin films by excimer laser and electric field are reported. The films were subjected to an electric field in the range of 0.1-3.3 kV/cm and laser irradiation in the range from 0.01 to 0.1 J/cm 2 . The effect of this treatment on the morphology and crystallinity of indium and gold thin films (10-100 nm thickness) is investigated. Indium films exhibited a three-fold grain growth at an electric field of 3.3 kV/cm. Gold thin film, on the other hand, showed significant grain growth at a much lower field of 0.6 kV/cm. The as-deposited thin films of indium and gold were amorphous but turned nanocrystalline with average crystallite sizes of 57 nm at 3.33 kV/cm and 35 nm at 0.66 kV/cm, respectively. When indium thin films were laser irradiated, flat disc-shaped grains for as-deposited thin films were transformed to spherical grains at a laser fluence of 0.02 J/cm 2 and cubical grains at 0.05 J/cm 2 . At 0.05 J/cm 2 , as-deposited amorphous indium and gold thin films turned nanocrystalline with crystallite sizes of 50 nm and 10 nm, respectively. Significantly, laser treatment causes the grain-size distribution to become narrower with a shift in mean size to larger values. Electric-field treatment on the other hand leads to a shifting of the mean grain size to larger values without affecting the distribution.

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Section: Resultsmentioning

confidence: 99%

A comparative study of laser‐ and electric‐field‐induced effects on the crystallinity, surface morphology and plasmon resonance of indium and gold thin films

Kumar

Krishna

2010

Physica Status Solidi (a)

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“…13 A very high dc electric field has been reported earlier to give rise to rapid crystallization of thin films. 14,15 Such an electric field can generate a very high temperature, due to Joule heating causing thermal migration of particles and their agglomeration. Grain growth is usually stimulated in the presence of an electric field.…”

Section: Resultsmentioning

confidence: 99%

Electric-Field-Induced Nanostructuring of Metallic Thin Films

2008

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The nanostructuring of thin Ni and In films by postdeposition electric field treatment is presented. Electric-field-induced nanostructuring effects, such as organization into an array of nanoparticles, formation of nanowires and transition from amorphous to nanocrystalline states, are demonstrated. It is further shown that the nanostructures can be manipulated by simply changing the direction of the applied field. Control parameters include separation of field probes (2-5 mm), duration (20-60 s) and direction of the field applied, and thickness (10-100 nm). High fields cause field-induced emission in the films. It is observed that while the microstructural reconstruction of the surfaces can be manipulated, the amorphous-crystalline transition is irreversible.

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“…Schematic diagrams that illustrate the constitution of JIC specimens have already been reported elsewhere [5][6][7]. Using the plasma-enhanced chemical vapor deposition (PECVD) method, a SiO 2 layer (first dielectric layer) with a thickness of 300 nm was formed on a 0.7mm-thick glass substrate.…”

Section: Experimental Methodologymentioning

confidence: 99%

Crystallization mechanisms of joule‐heating‐induced crystallization

Park

2009

Journal of Information Display

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In Joule-heating-induced crystallization, solid-to-solid or liquid-to-solid phase transformation could occur. It was found that novel physical phenomena that randomly nucleated liquid seeds, followed by rapid solidification in an amorphous matrix, during the Joule-heating-up period play an important role especially in liquid-to-solid transformation. Under some processing conditions, super-grains sized 6-8 μm were produced by the lateral growth from the initial seeds, without any artificially control.

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Millisecond crystallization of amorphous silicon films by Joule-heating induced crystallization using a conductive layer

Cited by 25 publications

References 12 publications

A comparative study of laser‐ and electric‐field‐induced effects on the crystallinity, surface morphology and plasmon resonance of indium and gold thin films

A comparative study of laser‐ and electric‐field‐induced effects on the crystallinity, surface morphology and plasmon resonance of indium and gold thin films

Electric-Field-Induced Nanostructuring of Metallic Thin Films

Crystallization mechanisms of joule‐heating‐induced crystallization

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