2004
DOI: 10.1142/s0218625x04006086
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Electrical Resistivity of Nanostructured Platinum and Gold Thin Films

Abstract: We have measured, at room temperature, the resistivity, the surface roughness and the lateral surface correlation lengths of nanostructured platinum and gold thin films. The films' thickness d, deposited by vacuum arc plasma, is in the range 1.31≤d≤11.66 nm for platinum and 1.77≤d≤10.46 nm for gold. A theoretical estimate of our experimental data has been made.

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Cited by 21 publications
(26 citation statements)
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“…The electrical resistance of Pt thin films has been monitored during growth by argon ion-beam sputtering (IBS) [6,7] and filtered cathodic arc [8]. The morphological and crystallographical grain sizes of Pt films grown by filtered cathodic arc have been investigated by scanning tunneling microscopy (STM) and X-ray diffractometry (XRD) [9].…”
Section: Introductionmentioning
confidence: 99%
“…The electrical resistance of Pt thin films has been monitored during growth by argon ion-beam sputtering (IBS) [6,7] and filtered cathodic arc [8]. The morphological and crystallographical grain sizes of Pt films grown by filtered cathodic arc have been investigated by scanning tunneling microscopy (STM) and X-ray diffractometry (XRD) [9].…”
Section: Introductionmentioning
confidence: 99%
“…[10][11][12] As can be seen from Eq. (4), the determination of σ s (d) depends on measurements of the surface roughness ∆(d) and morphological grain sizes D(d).…”
Section: Surface-induced Resistivity Of Metallic and Semiconducting Tmentioning
confidence: 94%
“…This function was represented by the Fourier series, 13,14 h(ρ) = n h n cos(2πρ/λ n ), where h n and λ n are the amplitudes and wavelengths, respectively, of the surface undulations created by the granular structure of the surface. [10][11][12][13][14][15][16] In this picture, 13 the wavelengths λ are given by λ ≈ D, where D is the morphological grain size. 11,12,16 So, as shown in preceding papers, 10,11 the form factor g(d) is given by:…”
Section: Surface-induced Resistivity Of Metallic and Semiconducting Tmentioning
confidence: 99%
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