Electrical Spin Injection and Threshold Reduction in a Semiconductor Laser

Holub, M.; Shin, Jungyeop; Saha, D.; Bhattacharya, P.

doi:10.1103/physrevlett.98.146603

Cited by 190 publications

(173 citation statements)

References 21 publications

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“…[76][77][78][79] Pumping spin-polarized carriers in the optical gain medium by using spin selective contacts or circularly polarized light can reduce the injection threshold required for electroluminescence or lasing action, finally boosting the performances of the Ge emitters and their implementation into Si-photonics circuits.…”

Section: Discussionmentioning

confidence: 99%

Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence

et al. 2013

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Spin orientation of photoexcited carriers and their energy relaxation is investigated in bulk Ge by studying spin-polarized recombination across the direct band gap. The control over parameters such as doping and lattice temperature is shown to yield high polarization degree, namely larger than 40%, as well as a fine-tuning of the angular momentum of the emitted light with a complete reversal between right-and left-handed circular polarization. By combining the measurement of the optical polarization state of band-edge luminescence and Monte Carlo simulations of carrier dynamics, we show that these very rich and complex phenomena are the result of the electron thermalization and cooling in the multi-valley conduction band of Ge. The circular polarization of the direct-gap radiative recombination is indeed affected by energy relaxation of hot electrons via the X valleys and the Coulomb interaction with extrinsic carriers. Finally, thermal activation of unpolarized L valley electrons accounts for the luminescence depolarization in the high temperature regime.

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Section: Discussionmentioning

confidence: 99%

Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence

et al. 2013

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“…7(c) and 7(d). For this case, the emitted light S − exceeds that with the opposite helicity, S + , there is a gain asymmetry, 5,6,8 another consequence of the polarizationdependent gain. The zero gain is attained at µ C+ − µ V for spin up (red curves) and µ C− − µ V for spin down transitions (blue curves).…”

Section: Understanding the Spin-dependent Gainmentioning

confidence: 99%

“…4,5 An increase from P n = 0.1 to 0.5 enhances the threshold reduction and the spin-filtering interval. However, different cavity positions c 2 and c 3 reveal a different behavior.…”

Section: Steady-state Gain Propertiesmentioning

confidence: 99%

“…It was experimentally demonstrated that injecting spinpolarized carriers already leads to noticeable differences in the steady-state operation. [4][5][6] The onset of lasing is attained for a smaller injection, lasing threshold reduction, while the optical gain differs for different polarizations of light, leading to gain asymmetry, also referred to as gain anisotropy. 5,6,8 In the stimulated emission, even a small carrier polarization in the active region can be greatly amplified and lead to the emission of completely circularly polarized emitted light, an example of a very efficient spin filtering.…”

Section: Introductionmentioning

confidence: 99%

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Toward high-frequency operation of spin lasers

Faria

Lee

et al. 2015

Phys. Rev. B

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Injecting spin-polarized carriers into semiconductor lasers provides important opportunities to extend what is known about spintronic devices, as well as to overcome many limitations of conventional (spin-unpolarized) lasers. By developing a microscopic model of spin-dependent optical gain derived from an accurate electronic structure in a quantum well-based laser, we study how its operation properties can be modified by spin-polarized carriers, carrier density, and resonant cavity design. We reveal that by applying an uniaxial strain it is possible to attain a large birefringence. While such birefringence is viewed as detrimental in conventional lasers, it could enable fast polarization oscillations of the emitted light in spin-lasers which can be exploited for optical communication and high-performance interconnects. The resulting oscillation frequency (> 200 GHz) would significantly exceed the frequency range possible in conventional lasers.

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“…This occurs in accordance with the optical quantum selection rules, where the spin angular momentum of the carriers is converted into the angular momentum of the photons. Spin-lasers offer advantages over conventional lasers, such as threshold reduction, [1][2][3][4] enhanced emission intensities, 5,6 increased modulation bandwidth, 4,7-9 full polarization controllability, 10-13 chirp control, 14,15 and ultrafast dynamics. 16 Whilst most work has concentrated on short-wavelength spin-VCSELs, 2,11,12 recently, the first long-wavelength spin-VCSEL emitting at the important telecom wavelength of 1300 nm and operating at room temperature under Continuous Wave (CW) optical pumping has been demonstrated.…”

mentioning

confidence: 99%

Control of emitted light polarization in a 1310 nm dilute nitride spin-vertical cavity surface emitting laser subject to circularly polarized optical injection

Alharthi

Hurtado

Al-Seyab

et al. 2014

Applied Physics Letters

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We experimentally demonstrate the control of the light polarization emitted by a 1310 nm dilute nitride spin-Vertical Cavity Surface Emitting Laser (VCSEL) at room temperature. This is achieved by means of a combination of polarized optical pumping and polarized optical injection. Without external injection, the polarization of the optical pump controls that of the spin-VCSEL. However, the addition of the externally injected signal polarized with either left- (LCP) or right-circular polarization (RCP) is able to control the polarization of the spin-VCSEL switching it at will to left- or right-circular polarization. A numerical model has been developed showing a very high degree of agreement with the experimental findings.

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Electrical Spin Injection and Threshold Reduction in a Semiconductor Laser

Cited by 190 publications

References 21 publications

Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence

Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence

Toward high-frequency operation of spin lasers

Control of emitted light polarization in a 1310 nm dilute nitride spin-vertical cavity surface emitting laser subject to circularly polarized optical injection

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