Electrical stabilities and memory mechanisms of organic bistable devices fabricated utilizing a poly(3,4-ethylene-dioxythiophene): Poly(styrenesulfonate) layer with a poly(methyl methacrylate) buffer layer

Son, Jung Min; Song, Woo Seung; Yoo, Chan Ho; Yun, Dong Yeol; Kim, Tae Whan

doi:10.1063/1.4709399

Cited by 11 publications

(5 citation statements)

References 28 publications

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“…The switching behavior of the Al/PEDOT:PSS/poly(methyl methacrylate)/indium–tin–oxide/polyethylene terephthalate memory device was addressed in ref . The writing, reading, and erasing voltage pulses for the current–time characteristics were considered as −4, +1, and +4 V, respectively, see Figure .…”

Section: Applicationsmentioning

confidence: 99%

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Polythiophene: From Fundamental Perspectives to Applications

et al. 2017

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The field of organic electronics has been heavily impacted by the discovery and development of π-conjugated conducting polymers. These polymers show great potential for integration into future optical and electronic devices due to their capacity to transition between semiconducting and conducting states as well as the ability to alter mechanical properties by controlled doping, chemical modification, and stacking or creating composites with other materials. Among π-conjugated polymers, polythiophene and its derivatives has been one of the most extensively studied and is widely investigated computationally and experimentally for use in electronic devices such as light-emitting diodes, water purification devices, hydrogen storage, and biosensors. Various theoretical modeling studies of polythiophene ranging from an oligothiophene approach to infinite chain lengths (periodic boundary conditions) have been undertaken to study a variety of electronic and structural properties of these polymers. In this review, we discuss the recent advances in the understanding of pristine polythiophene and its derivatives from fundamental perspectives to device applications.

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Section: Applicationsmentioning

confidence: 99%

Section: Applicationsmentioning

confidence: 99%

Polythiophene: From Fundamental Perspectives to Applications

et al. 2017

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“…This all‐polymer device exhibited low write voltage of less than 3 V, ON/OFF ratio of more than 10 3 , good retention of more than 10 000 s and storage stability of more than 3 months. Son et al demonstrated a flexible ORM by using PEDOT:PSS as active layer sandwiched between the Al top electrode and the ITO bottom electrode. The PMMA buffer layer was introduced to smooth the PEDOT:PSS film.…”

Section: Flexible Resistive Memory With Organic Materialsmentioning

confidence: 99%

Recent Advances of Flexible Data Storage Devices Based on Organic Nanoscaled Materials

Zhou

Mao

Ren

et al. 2018

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Following the trend of miniaturization as per Moore's law, and facing the strong demand of next-generation electronic devices that should be highly portable, wearable, transplantable, and lightweight, growing endeavors have been made to develop novel flexible data storage devices possessing nonvolatile ability, high-density storage, high-switching speed, and reliable endurance properties. Nonvolatile organic data storage devices including memory devices on the basis of floating-gate, charge-trapping, and ferroelectric architectures, as well as organic resistive memory are believed to be favorable candidates for future data storage applications. In this Review, typical information on device structure, memory characteristics, device operation mechanisms, mechanical properties, challenges, and recent progress of the above categories of flexible data storage devices based on organic nanoscaled materials is summarized.

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“…As switching medium in flexible resistive memories, different materials can also be used, such as polymers (PEDOT:PSS [26][27][28], pEGDMA [14,29,30] and PS-PMMA [31] for example), metal nanoparticles, 2D materials, ferroelectric materials or organic molecules [4]. In particular, organic materials have been highly studied for flexible applications due to their good flexibility and low fabrication price as opposed to inorganic materials [32][33][34][35][36][37][38][39].…”

Section: Introductionmentioning

confidence: 99%

Resistive switching of silicon-silver thin film devices in flexible substrates

et al. 2020

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Novel applications for memory devices demand nanoscale flexible structures. In particular, resistive switching (RS) devices are promising candidates for wearable and implantable technologies. Here, the Pt/Si/Ag/TiW metal–insulator–metal structure was fabricated and characterized on top of flexible substrates using a straightforward microfabrication process. We also showed that these substrates are compatible with sputtering deposition. RS was successfully achieved using both commercial cellulose cleanroom paper and bacterial cellulose, and polymer (PET) substrates. The bipolar switching behavior was observed for both flat and bent (under a radius of 3.5 mm) configurations. The observed phenomenon was explained by the formation/rupture of metallic Ag filaments in the otherwise insulating Si host layer.

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Electrical stabilities and memory mechanisms of organic bistable devices fabricated utilizing a poly(3,4-ethylene-dioxythiophene): Poly(styrenesulfonate) layer with a poly(methyl methacrylate) buffer layer

Abstract: Articles you may be interested inFabrication of poly(methyl methacrylate)-MoS2/graphene heterostructure for memory device application

Cited by 11 publications

References 28 publications

Polythiophene: From Fundamental Perspectives to Applications

Polythiophene: From Fundamental Perspectives to Applications

Recent Advances of Flexible Data Storage Devices Based on Organic Nanoscaled Materials

Resistive switching of silicon-silver thin film devices in flexible substrates

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