Electrical studies on Na and Sm substituted strontium bismuth titanate (SBTi) ceramics

Ravikiran, U.; Sarah, P.; Zacharias, Elizabeth

doi:10.1080/00150193.2020.1853740

Cited by 4 publications

(1 citation statement)

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“…The Bi and oxygen vacancies will be formed for SBT ceramics during the process of sintering, the oxygen vacancy maintains the neutral charge (5,6) . The oxygen vacancy may cause due to enhanced leakage current, impeding the displacement of the Ti 4+ ion, screening the electric field near the space charge region, and trapping of charge carriers (7,8) . To reduce the defects such as poor density and electrical properties in SBT ceramics, controlling the sintering process temperature leads to lowering the volatilization of Bi 2 O 3 .…”

Section: Introductionmentioning

confidence: 99%

Structural, Dielectric Properties and Conduction Mechanism of SrBi4Ti4O15 Ceramics

Lakshmipathi¹,

Kumar²,

Sreelekha³

et al. 2022

IJST

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Objectives: 1. To prepare SrBi 4 Ti 4 O 15 ceramics via solid-state reaction method. 2. To make a systematic investigations on structural and dielectric properties of SBT ceramics. Methods: The structural information of Strontium Bismuth Titanate (SBT) ceramics is examined by X-ray diffraction and Raman spectroscopy techniques. The surface morphology and elemental analysis of SBT ceramic is employed by scanning electron microscope attached with energydispersive X-ray spectroscopy. The dielectric measurements of SBT ceramics were performed using the impedance analyzer HIOKI-3532 LCR meter. Findings: From the X-ray diffraction studies, SBT exhibits a strongest diffraction peak (1 1 9) with the lattice parameters a = 5.428 Å, b = 5.423 Å, and c = 42.146 Å. The diffraction patterns were indexed to the orthorhombic phase. The surface morphology of the samples shows plate-like morphology with a grain size of ~1µm. The temperature-dependent ac conductivity confirms the thermally activated conduction mechanism. The ac conductivity of SBT ceramic was increased from 2.25 × 10 -5 to 7.16 × 10 -4 Ω.m -1 with an increase of frequency from 10 kHz to 1 MHz. The high curie temperature at ~540 • C, and low dielectric loss of ~0.031 for SBT ceramics can be appropriate for high-temperature electronic applications. Novelty: SBT ceramic exhibits enhanced electrical conductivity value (7.16 × 10 -4 Ω.m -1 )and makes it suitable for electronic device applications.

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Section: Introductionmentioning

confidence: 99%