Electrical study of 4H-SiC irradiated with swift heavy ions

Kalinina, Evgenia V.; Onushkin, Grigory; Davidov, D.; Hallén, Anders; Konstantinov, A. O.; Скуратов, В.А.; Stano, J.

doi:10.1109/sim.2002.1242735

Cited by 5 publications

(4 citation statements)

References 2 publications

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“…The defects on curve (a) are the E0.09, E0.12, E0.15 and E0.65.From curve (b) we notice that Xe irradiation introduced two electron traps E0.40 and E0.71 in addition to the native ones. A similar observation was made by Kalinina et al in Kr irradiated 4H-SiC [8]. The defect signatures (activation energy Ea and capture cross section (σn) was determined from the slope and the apparent capture cross section was deduced from the slopes of Arrhenius plots in Figure 8 using Equation 1.…”

Section: Confocal Raman Spectroscopysupporting

confidence: 53%

“…Kalinina et al irradiated 4H-SiC UV detectors with 167 MeV Xe ions and showed that the service life and radiation endurance of the devices increased at higher temperatures [7]. In an electrical study, Kalinina et al also irradiated 4H-SiC with 245 MeV Kr, and showed that it increased the concentration of Z1 levels but the origin and nature of defects was not discussed [8].…”

Section: Introductionmentioning

confidence: 99%

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Defects in swift heavy ion irradiated n-4H-SiC

Tunhuma

Diale

Nel

et al. 2019

Nuclear Instruments and Methods in Physics Research Section B:

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Section: Confocal Raman Spectroscopysupporting

confidence: 53%

Section: Introductionmentioning

confidence: 99%

Defects in swift heavy ion irradiated n-4H-SiC

Tunhuma

Diale

Nel

et al. 2019

Nuclear Instruments and Methods in Physics Research Section B:

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“…The defect Z 1 /Z 2 is observed around 280 K, with very low concentrations compared to that measured after radiation (e.g. by protons [18] or Kr ions [19]).…”

Section: Dlts Measurementsmentioning

confidence: 93%

Measure and analysis of 4H-SiC Schottky barrier height with Mo contacts

Zhang

Raynaud

Planson

2019

Eur. Phys. J. Appl. Phys.

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Current–voltage (I–V) and capacitance–voltage (C–V) characteristics of Schottky Mo/4H-SiC diodes have been measured and analyzed as a function of temperature between 80 and 400 K. The I–V characteristics significantly deviate from ideal characteristics predicted by the thermionic emission model because of the inhomogeneity of Schottky contact. After a brief review of the different existing models, the main parameters (ideality factor, barrier height, and effective Richardson constant) of both diodes have been extracted in the frame of a Gaussian barrier height distribution model, whose mean and standard deviation are linearly dependent on voltage and temperature, as well as in the context of the potential fluctuation model. The results are compared with the values extracted by C–V and the values in the literature. A link is established between these two models. Diodes of different I–V characteristics, either identified as single barrier or double barrier, have been analyzed by Deep Level Transient Spectroscopy (DLTS) to investigate the deep level defects present. No noticeable difference has been found.

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“…The four properties of SiC which set it aside from other materials are: relatively high melting temperature, low neutron capture, high thermal conductivity and the size of its electronic band gap [2]. These properties enables SiC to be used as a structural material in nuclear reactors and in high power electronics [2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%