Irradiation effects of swift heavy ions on palladium films deposited on 6H-SiC substrate

Investigating the structural changes induced by SHI on W–SiC samples

“…The samples irradiated to a fluence of 10 14 cm -2 resulted in the reaction between Pd and SiC. Similar results were observed by Thabethe et al [14] when they studied the effect of SHI on Pd-SiC samples. The researchers deposited Pd on SiC and irradiated the sample with Xe 26+ SHI energies of 167 MeV.…”

“…After the deposition, W-SiC samples were irradiated with Xe 26+ swift heavy ions of 167 MeV at room temperature. The ion fluences were set at 1×10 12 , 1×10 13 and 1×10 14 ions/cm 2 . The irradiation was performed at the Joint Institute for Nuclear Research (JINR), Dubna using the IC-100 FLNR cyclotron.…”

“…Extensive work has focused on studying the interaction between metals and SiC caused by different deposition methods and annealing (heat treatment) [8]- [10], while others have focused on identifying the best method to deposit metal films on SiC [11]- [13]. More recently, a number of studies have focused on the effects of swift heavy ions (SHIs) irradiation on m-SiC composites [14]- [16].…”

Morphology Evolution of Nanoscale-Thick Au/Pd Bimetallic Films on Silicon Carbide Substrate

“…In these applications, SiC's characteristic properties, such as a high melting temperature, high thermal conductivity, high Young modulus, wide energy band gap, and chemical stability are fully exploited [1][2][3]. In particular, metal/SiC Schottky diodes are used in the fabrication of different devices, ranging from high-temperature and -power electronics to very sensitive high-temperature hydrogen and hydrocarbon gas detectors and biosensors (due to SiC's biocompatibility properties) [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. So, in the last few decades, to meet specific technological requirements, various methodologies were exploited for the fabrication of metal/SiC diodes.…”

“…being widely investigated. In particular, Pd/SiC [1][2][3][4][5][6][7]9,11,13,16] and Au/SiC [1][2][3][4][5][6][16][17][18][19][20][21][22] Schottky contacts with metals in the form of nanoscale-thick deposited films or complex-shape deposited nanostructures attracted much interest for various technological applications ranging from electronics and optoelectronics to sensing and catalysis. In fact, in general, nanoscale-thick metal films and metal nanostructures on functional surfaces are the basis of innovative versatile and high-performance devices [23][24][25][26][27][28][29][30], whose properties are strongly dependent on the morphology, structure, shape, size, and metal-substrate interactions of metal films and nanostructures.…”