Electrical Switching and Bistability in Organic/Polymeric Thin Films and Memory Devices

Yang, Yang; Ouyang, Jianyong; Ma, Longfei; Tseng, Ricky J.; Chu, Chih‐Wei

doi:10.1002/adfm.200500429

Cited by 573 publications

(406 citation statements)

References 95 publications

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“…The electrical hysteresis behavior shown in the I-V characteristics is an essential feature of a resistive-switching memory device. 65 The resistive transition (OFF-ON) occurs at a certain applied voltage, which is defined as the turn-on voltage. The transition is equivalent to the 'writing' process in a digital memory cell.…”

Section: Electrical Characteristics Of the Hybrid Nonvolatile Memory mentioning

confidence: 99%

Electrical memory devices based on inorganic/organic nanocomposites

Kim

Yang²,

et al. 2012

NPG Asia Mater

168

110

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Nonvolatile memory devices based on hybrid inorganic/organic nanocomposites have emerged as excellent candidates for promising applications in next-generation electronic and optoelectronic devices. Among the various types of nonvolatile memory devices, organic bistable devices fabricated utilizing hybrid organic/inorganic nanocomposites have currently been receiving broad attention because of their excellent performance with high-mechanical flexibility, simple fabrication and low cost. The prospect of potential applications of nonvolatile memory devices fabricated utilizing hybrid nanocomposites has led to substantial research and development efforts to form various kinds of nanocomposites by using various methods. Generally, hybrid inorganic/organic nanocomposites are composed of organic layers containing metal nanoparticles, semiconductor quantum dots (QDs), core-shell semiconductor QDs, fullerenes, carbon nanotubes, graphene molecules or graphene oxides (GOs). This review article describes investigations of and developments in nonvolatile memory devices based on hybrid inorganic/organic nanocomposites over the past 5 years. The device structure, fabrication and electrical characteristics of nonvolatile memory devices are discussed, and the switching and carrier transport mechanisms in the hybrid nonvolatile memory devices are reviewed. Furthermore, various flexible memory devices fabricated utilizing hybrid nanocomposites are described and their future prospects are discussed.

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Section: Electrical Characteristics Of the Hybrid Nonvolatile Memory mentioning

confidence: 99%

Electrical memory devices based on inorganic/organic nanocomposites

Kim

Yang²,

et al. 2012

NPG Asia Mater

168

110

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“…3 Many of the recipes for switching are based on the incorporation of metallic nanoparticles within an organic thin film. [5][6][7] The presence of the nanoparticles is thought to influence the transfer of charge ͑e.g., by a trapping/hopping process͒. 1 However, switching has also been reported in devices in which a single organic layer is sandwiched between metallic electrodes.…”

Section: Introductionmentioning

confidence: 99%

Electrical behavior of memory devices based on fluorene-containing organic thin films

Dimitrakis

Normand

Tsoukalas

et al. 2008

Journal of Applied Physics

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Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-pro t purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. We report on switching and negative differential resistance ͑NDR͒ behaviors of crossed bar electrode structures based on Al/organic layer/Al devices in which the organic layer was a spin-coated layer of 7-͕4-͓5-͑4-tert-butylphenyl͒-1,3,4-oxadiazol-2-yl͔phenyl͖-9,9-dihexyl-N , N-diphenyl-fluoren-2-amine. The addition of gold nanoparticles ͑0.5 wt % ͒ did not change the switching behavior of thicker film structures; however, devices incorporating the nanoparticles showed more reproducible characteristics. In most cases, a "forming" process, in which a large positive voltage was applied to the top Al electrode, was required before the NDR and conductivity switching were observed. Three different electrical conductivity mechanisms have been identified: Poole-Frenkel conductivity in unformed structures, linear current versus voltage characteristics for the ON state in formed devices, and superlinear current versus voltage behavior for the OFF state in formed devices. Models based on metallic filaments or on the injection and storage of charge do not explain all our experimental observations satisfactorily. Instead, an explanation based on the formation of nanocrystalline regions within the thin film is suggested. The devices can be used as two-terminal memory cells operating with unipolar voltage pulses.

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“…Rather than encoding '0' and '1' as the amount of charge stored in a cell, a polymer memory stores data in another form, based on the high-and low-conductivity response to an applied voltage (electrical bistability; Raymo 2002). In the earlier fine works on polymer memory effects, both volatile and non-volatile memory effects based on bistable electrical conductivity switching have been observed (Bandhopadhyay & Pal 2003;Bozano et al 2005;Paul et al 2006;Verbakel et al 2006;Wang et al 2006;Yang et al 2006). Recently, multi-level conductance switching in polymer films has also been demonstrated (Lauters et al 2006).…”

Section: Introductionmentioning

confidence: 99%

Tristable electrical conductivity switching in a polyfluorene–diphenylpyridine copolymer with pendant carbazole groups

Liu

Liaw

Lee

et al. 2009

Phil. Trans. R. Soc. A.

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Tristable electrical conductivity switching and non-volatile memory effects are demonstrated in a conjugated copolymer of poly(2,6-diphenyl-4-((9-ethyl)-9H -carbazole)-pyridinyl-alt-2,7-(9,9-didodecyl)-9H -fluorenyl) (PPCzPF). The indium-tin oxide (ITO)/PPCzPF/Al device can be switched from the low-conductivity (off) state to the first high-conductivity (on-1) state at 1.8 V, with an on/off current ratio of approximately 100. The device can be further switched from the on-1 state to the next higher conductivity (on-2) state at 2.4 V, with an on-2/on-1 current ratio of approximately 20. All the three conductivity states are accessible, stable and nonerasable. The tri-level conductance switching can be explained in terms of field-induced conformational ordering of the polymer chains and enhanced charge-transfer interaction at the PPCzPF/ITO interface.

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Electrical Switching and Bistability in Organic/Polymeric Thin Films and Memory Devices

Cited by 573 publications

References 95 publications

Electrical memory devices based on inorganic/organic nanocomposites

Electrical memory devices based on inorganic/organic nanocomposites

Electrical behavior of memory devices based on fluorene-containing organic thin films

Tristable electrical conductivity switching in a polyfluorene–diphenylpyridine copolymer with pendant carbazole groups

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