Electrical transport and dielectric breakdown in Pb(Zr,Ti)O<sub>3</sub>thin films

Chen, X.; Kingon, Angus I.; Al-Shreef, H.; Bellur, K. R.

doi:10.1080/00150199408244733

Cited by 41 publications

(14 citation statements)

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“…19 However, even when the same material is used for the top and bottom electrodes, their work functions could be different due to the different thermal conditions during processing which could cause a difference in their structures. 45,46 In PT/SBT/Pt capacitors, this could lead to retention loss under low operating voltage and development of imprint under high operating voltage. Therefore, considering that SBT/IrO 2 films exhibit excellent retention properties even in the case of the exaggerated asymmetry of the tip/film/electrode heterostructure, it seems that in the SBT capacitors with IrO 2 electrodes the switched polarization will be retained much better, i.e., long enough for use in nonvolatile memories.…”

Section: Discussionmentioning

confidence: 99%

Polarization retention in SrBi2Ta2O9 thin films investigated at nanoscale

Gruverman¹,

Tanaka²

2001

Journal of Applied Physics

111

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The nanoscale mechanism of retention behavior in SrBi 2 Ta 2 O 9 ͑SBT͒ thin films has been investigated by means of piezoresponse scanning force microscopy. It has been found that SBT films with Pt electrodes ͑SBT/Pt͒ exhibit a strong dependence of retention characteristics upon domain polarity: positive domains with the polarization vector pointing to the bottom electrode exhibit excellent stability in sharp contrast to the negative domains which show poor retention. The backswitching of the negative domains proceeds via sidewise motion of the domain walls and shows a log-time dependence. The strong effect of the poling voltage parameters ͑duration and amplitude͒ and the previous switching pattern on domain retention behavior is reported. On the other hand, in SBT films with IrO 2 electrodes ͑SBT/IrO 2 ), the written domains of both polarities show no sign of relaxation to the original state irrespective of the parameters of the poling voltage. The difference in retention behavior of opposite domains in SBT/Pt films is explained by the presence of the polarization-independent built-in bias at the SBT/Pt interface pointing to the bottom electrode. This built-in bias triggers the backswitching of a negative domain by generating positive nuclei at the interface. The forward growth of the nuclei is further governed by the field of the space charge which screens the original polarization state. The symmetric retention behavior and the stability of domain in SBT films with IrO 2 electrodes are attributed to the inhibition of the nucleation process at the SBT/IrO 2 interface.

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Section: Discussionmentioning

confidence: 99%

Polarization retention in SrBi2Ta2O9 thin films investigated at nanoscale

Gruverman¹,

Tanaka²

2001

Journal of Applied Physics

111

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“…Therefore, we think the current conduction through the grain boundaries is fairly dominant in the total conduction of the PZT thin film measured in our experiment. However, experimental facts that current-voltage-time ͑I-V-t͒ characteristics are strongly dependent on the electrode material [11][12][13] and that the leakage current obeyed the field dependence predicted for a space charge dominated system [3][4][5] are not explained solely by conduction through the grain boundary; rather, they are more adequately explained by conduction through the electrode interface and the bulk grain. Moreover, the effects of the space charge and surface chemistry of grain boundaries, and the relationship between SPM observations and the bulk current measurement are still unknown.…”

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confidence: 98%

Investigation of the current path of Pb(Zr,Ti)O3 thin films using an atomic force microscope with simultaneous current measurement

Fujisawa

Shimizu

Horiuchi

et al. 1997

Applied Physics Letters

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The current path of Pb(Zr,Ti)O3 thin films was investigated using an atomic force microscope with simultaneous observations of the surface topography and current measurements using a conductive cantilever. From the current images, it was found that there were some spots where the current flowed relatively easily. By comparing this with the topographic images, these spots were found to be distributed along the grain boundaries—the current barely flowed through the flat surface within the bulk grains. Moreover, the position of these distributed spots did not change even if the value and polarity of the applied voltages were changed. These experimental results indicated that the current flowed through the grain boundaries and that the grain boundary was the current path.

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“…As can be seen, there is almost no polarity dependence (between stressing the top electrode at positive and negative dc biases), suggesting that it is an intrinsic effect. Extrinsic effects, such as the moisture related early degradation observed for PZT films, which causes a severely polarity-dependent degradation rate, would make the resistance degradation analyses difficult [8,9]. Numata et al also observed a severe polarity-dependent resistance degradation for sputtered BST films [I].…”

Section: Resultsmentioning

confidence: 99%

An Important Failure Mechanism in MOCVD (Ba,Sr)TiO₃ thin Films: Resistance Degradation

et al. 1997

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We have investigated the intrinsic resistance degradation behavior of fiber-textured MOCVD (Ba,Sr)TiO 3 thin films appropriate for use in advanced DRAMs and integrated decoupling capacitors, as a function of applied voltage polarity, thickness, temperature, and dc bias/field. The results suggest that there is a significant stoichiometry effect on the measured resistance degradation lifetimes. The measured degradation lifetime increases as the Ti content is increased from 51.0 to 52.0 at%Ti, and then decreases with higher at%Ti. Predicted resistance degradation lifetimes obtained from both temperature and voltage extrapolations to DRAM operating conditions of 85°C and 1.6 V exceed the current benchmark of 10 years for all of the films studied.

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Electrical transport and dielectric breakdown in Pb(Zr,Ti)O₃thin films

Cited by 41 publications

References 1 publication

Polarization retention in SrBi2Ta2O9 thin films investigated at nanoscale

Polarization retention in SrBi2Ta2O9 thin films investigated at nanoscale

Investigation of the current path of Pb(Zr,Ti)O3 thin films using an atomic force microscope with simultaneous current measurement

An Important Failure Mechanism in MOCVD (Ba,Sr)TiO₃ thin Films: Resistance Degradation

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Electrical transport and dielectric breakdown in Pb(Zr,Ti)O3thin films

Cited by 41 publications

References 1 publication

Polarization retention in SrBi2Ta2O9 thin films investigated at nanoscale

Polarization retention in SrBi2Ta2O9 thin films investigated at nanoscale

Investigation of the current path of Pb(Zr,Ti)O3 thin films using an atomic force microscope with simultaneous current measurement

An Important Failure Mechanism in MOCVD (Ba,Sr)TiO3 thin Films: Resistance Degradation

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Electrical transport and dielectric breakdown in Pb(Zr,Ti)O₃thin films

An Important Failure Mechanism in MOCVD (Ba,Sr)TiO₃ thin Films: Resistance Degradation