Electrical transport in RF-sputtered SiO2 films A review

The effect of the density of states on the conductivity of the small-polaron hopping regime in disordered systems

“…The DC conductivity behaviour of a variety of chalcogenide glasses such as Ge,Sb,Se,, As,Se, (Mohan and Rao 1985), As-Te based glasses (Triberis 1986), phosphorushybrate and phosphotungstate glasses (Selvaraj and Rao 1988) and the DC conduction in RF sputtered S O , films (Meaudre el d 1983, Meaudre and Meaudre 1984, Triberis 1987, 1988a have been very satisfactorily analysed using Triberis and Friedman's model (1981) in which correlations are ignored.…”

P‐6.3: A novel mode of device failure due to the photosensitive properties of silicon oxide defects

“…How this photo-generated carrier is transferred to the TFT device remains to be analyzed. In fact, amorphous silicon oxide film has special properties, a large number of defects exist in its body and can be transferred under certain conditions 7 . We propose the following mechanism:1.…”

Electronic conduction and instabilities in thin films of amorphous silicon dioxide

“…Shatzkes et al (1974) observed threshold switching in thermal oxides which they attributed to filamentary formation at high fields. Meaudre (1981, 1984) and Meaudre et al (1983) also observed a high-conducting state in the high-field region, but they attributed this to an unstable state before the onset of breakdown of the oxide, and they confined their measurements to fields below this unstable region. Verderber, Simmons and Eales (1967) also reported similar effects in evaporated films of silicon monoxide.…”

“…They have been studied by many researchers (see, for example, Klein 1966, Lamb and Rundle 1967, Laverty 1971, Shatzkes, Av-Ron and Anderson 1974, Meaudre and Meaudre 1981, 1984, and Meaudre, Meaudre and Hauser 1983, both in films of SiO, thermally grown on silicon and in sputtered films. Klein (1966) observed a high conducting state at high fields which he termed as 'self-healing breakdown'.…”