Electrical Transport in Ultrathin NdNiO₃ Films

Abstract

Electrical transport properties in ultrathin NdNiO 3 films grown on single crystal LaAlO 3 (001) substrate were characterized. Films with thicknesses ranging from 0.6 nm to 12 nm were grown using a pulsed laser technique. Four probe resistivity as a function of temperature measurements indicated a strong dissipation of strain effects from 0.6 nm to 6 nm as well as the presence of defects in the 12 nm sample. A proposed mechanism of kinetically stable glassy phase formation explains the time dependence of the resistivity in both cooling and heating cycles.