Electrical transport measurements of thin film samples under high hydrostatic pressure

Abstract

We present a method to perform electrical measurements of epitaxial films and heterostructures a few nanometers thick under high hydrostatic pressures in a diamond anvil cell (DAC). Hydrostatic pressure offers the possibility to tune the rich landscape of properties shown by epitaxial heterostructures, systems in which the combination of different materials, performed with atomic precision, can give rise to properties not present in their individual constituents. Measuring electrical conductivity under hydrostatic pressure in these systems requires a robust method that can address all the challenges: the preparation of the sample with side length and thickness that fits in the DAC setup, a contacting method compatible with liquid media, a gasket insulation that resists high forces, as well as an accurate procedure to place the sample in the pressure chamber. We prove the robustness of the method described by measuring the resistance of a two dimensional electron system buried at the interface between two insulating oxides under hydrostatic conditions up to ∼5 GPa. The setup remains intact until ∼10 GPa, where large pressure gradients affect the two dimensional conductivity.

The influence of compression on the lattice stability of α-FAPbI3 revealed by numerical simulation

“…Our discoveries could be verified experimentally by, e.g., the diamond anvil cell (DAC) apparatus, as has been previously accomplished. 44 Such a method is able to introduce residue hydrostatic compressive stress in the perovskite film, effectively suppressing the transition of the a to d phase. In addition, the bandgap of semiconductors can be reduced by pressure, 45 which will alter the electronic properties, resulting in higher carrier concentrations, leading to a better PCE performance.…”

Ion Dynamics in a Highly Compressed Solution of Tetra-Ethylammonium – Tetrafluoroborate Salt in Propylene Carbonate: A Study in the Equilibrium and Glassy States

“…The electrode wires are embedded in a composite gasket [62][63][64] to prevent any short-circuit with the metallic parts of the gasket sandwiched between the two anvils. The two opposite electrodes 200 m apart are located flush with the walls of a cylindrical cavity made of insulating material.…”

Advances in Rare‐Earth Tritelluride Quantum Materials: Structure, Properties, and Synthesis

“…Previous studies have focused on in situ electrical transport [56,57] and magnetic susceptibility [58,59] measurements on a variety of different RTe 3 material systems at high pressures to capture emergent quantum phenomena and associated phase transitions. Figure 4b,c shows the schematic of electrical DAC measurement.…”