Electrical Transport Properties and Field Effect Transistors of Carbon Nanotubes

Abstract

This paper presents a review on our recent work on carbon nanotube field effect transistors, including the development of ohmic contacts, high-κ gate dielectric integration, chemical functionalization for conformal dielectric deposition and pushing the performance limit of nanotube FETs by channel length scaling. Due to the importance of high current operations of electronic devices, we also review the high field electrical transport properties of nanotubes on substrates and in freely suspended forms. Owing to their unique properties originating from their crystalline 1D structure and the strong covalent carbon-carbon bonding configuration, carbon nanotubes are highly promising as building blocks for future electronics. They are found to perform favorably in terms of ON-state current density as compared to the existing silicon technology, owing to their superb electron transport properties and compatibility with high-κ gate dielectrics. Future directions and challenges for carbon nanotube-based electronics are also discussed.

Implementation of logic gates using CNFET for energy constraint applications

“…Chime Labs might have been capable will fill in out a concurrence with Lilienfeld, who might have been even now alive in that run through (it is not referred to though they paid him cash or not). It might have been at that run through those ringer Labs rendition might have been provided for those sake bipolar intersection transistor, or essentially intersection transistor, What's more Lilienfeld's configuration took the sake field impact transistor In 1959, DawonKahng and Martin M. (John) Atalla at Bell Labs invented the Metal-oxidesemiconductor field-impact transistor (MOSFET) concerning illustration a branch of the protected FET plan [5] . Operationally What's more structurally unique in relation to those bipolar intersection transistor, the MOSFET might have been produced Toward executing or neglecting an insulating layer on the surface of the semiconductor et cetera putting a metallic entryway cathode on that.…”

Di-electrophoresis assembly and fabrication of SWCNT field-effect transistor

“…In 1998, Dekker research group fabricated a room-temperature field-effect transistor (FET) by a semi-conductive SWCNT [5] , which raised much interest among researchers. After that, researchers began to fabricate nano electrical devices based on SWCNT, and even some simple logic electronic circuits based on SWCNT FET [6][7][8][9][10][11] . In the fabrication of nano electrical devices or even systems based on SWCNT, SWCNT FET is one of the most basic component units.…”

The 2008 Kavli Prize in Nanoscience: Carbon Nanotubes

“…9,13,[30][31][32] Furthermore, owing to their 1-D nature, better electrostatics can be attained by coaxial gating of nanotubes, thereby minimizing the various short-channel effects that are often encountered in nanoscale, planar devices. 30 Ballistic nanotube transistors, free of any carrier scattering, have already been shown to be capable of delivering ϳ30ϫ higher ON current density (ON current is proportional to switching speed) as compared to stateof-the-art Si devices, therefore demonstrating the potential of using chemically synthesized molecular-scale structures for high-performance and low-power electronics ( Figure 3).…”

“…[1][2][3][4][5][6][7] One particularly interesting example of miniaturized structures are one-dimensional (1-D) nanomaterials, such as carbon nanotubes and nanowires (NWs), with molecular-scale diameters and microscale lengths. [1][2][3][4][5][6][8][9][10][11][12][13][14][15] In recent years, significant progress has been made in the synthesis, assembly, understanding of the fundamental properties, and design of novel applications based on 1-D materials, a small subset of which are summarized in this article.…”

“…[8][9][10][11][12][13][14][15][27][28][29][30][31][32][33][34][35][36][37][38][39][40][41][42][43] Particularly, nanotube electronics have been the focus of a wide range of academic and industrial research efforts. [9][10][11]13,[27][28][29][30][31][32][33] The high electron and hole mobility ( Ϸ 10000 cm 2 /V · s) of nanotubes, their …”