Electrical Transport Properties of Gallium Phosphide under High Pressure

Li, Yuqiang; Liu, Jie; Xiao, Ningru; Yu, Liyuan; Zhang, Jianxin; Ning, Pingfan; Zhang, Zanyun; Niu, Pingjuan

doi:10.1002/pssb.201900470

Cited by 4 publications

(5 citation statements)

References 30 publications

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“…2,7,9,10,16−20 For instance, the investigations of GaP under high pressure have revealed a sharp decrease in its resistivity due to grain boundary effects. 2 Similarly, reduction in the band gap and deformation potential and enhancement in the optical reflectivity of GaP have been reported due to hydrostatic pressure. 16 On other hand, the indirect band gap of GaP has been turned to a direct band gap by doping with N, In, As, and Sb.…”

Section: ■ Introductionmentioning

confidence: 73%

“…The group III-phosphide compounds have attracted remarkable attention in the past two decades due to their fascinating physical features, suitable for applications in optoelectronic devices. , Being the key representative of the III-phosphide family, GaP is widely studied compared to other phosphide compounds due to its exceptional physical properties. − The ground-state structure of GaP has been reported to be zinc blende (zb) in which it exhibits an indirect band gap of magnitude 2.26 eV . The indirect nature of the band gap is however unwanted in several technological applications such as in light-emitting devices. , Therefore, the electronic structure and physical properties of GaP have been significantly improved via different approaches such as doping, strain and defect engineering, and dimensionality reductions. ,,,,− For instance, the investigations of GaP under high pressure have revealed a sharp decrease in its resistivity due to grain boundary effects . Similarly, reduction in the band gap and deformation potential and enhancement in the optical reflectivity of GaP have been reported due to hydrostatic pressure .…”

Section: Introductionmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

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First-Principles Study of the Physical Properties of Novel Polytypes of Gallium Phosphide

Haq

AlFaify

Abdiche

et al. 2021

Crystal Growth & Design

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The polytypism of solids has been established as one of the most effective approaches to alter their physical properties. In this first-principles-based study, we practiced the polytypism of gallium phosphide (GaP) to evolve its physical properties for advanced technological applications. In this regard, new polytypes of GaP in wurtzite (wz)-, sphalerite (sp)-, beryllium oxide (β-BeO)-, and silicon carbide (SiC)-like structures have been generated by applying compressive and tensile pressure on its ground-state zinc blende (zb) structure. Our analysis shows its transformation to a SiC-like structure at a small pressure of 0.60 GPa. On the other hand, transition to wz-, sp-, and β-BeO-like structures has been realized from the zb phase of GaP by applying moderate tensile stress of −0.07, −0.79, and −3.65 GPa, respectively. Calculations of the cohesive energies of the new polytypes are found comparable to those of the zb phase. Similarly, the phonon band structures calculated for these new polytypes have been found free from the imaginary frequencies, indicating their adequate dynamical stability. Like the zb phase, the sp phase exhibited an indirect band gap, whereas wz-GaP, β-BeO-GaP, and SiC-GaP demonstrated direct band gaps. The computed energy gaps for the zb phase, wz phase, sp phase, β-BeO phase, and SiC phase amount to 2.359, 2.528, 1.740, 1.814, and 1.984 eV, respectively. On the other hand, these polytypes exhibited a remarkable absorption of the visible and ultraviolet (UV) light of the order of ∼10 6 cm −1 , which is useful for photovoltaic applications. Investigations of the refractive indices reveal their transparency for light photons having energy less than 7.5 eV. We also estimated plasmon excitation energies as 16.97, 17.075, 16.97, 16.90, and 16.91 eV, respectively, for the zb phase, wz phase, sp phase, β-BeO phase, and SiC phase. Our predictions indicate novel polytypes of GaP as promising candidates for use in electronic and optoelectronic devices.

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Section: ■ Introductionmentioning

confidence: 73%

Section: Introductionmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

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First-Principles Study of the Physical Properties of Novel Polytypes of Gallium Phosphide

Haq

AlFaify

Abdiche

et al. 2021

Crystal Growth & Design

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“…The appearance of metallization is accompanied by a resistance decrease with several orders of magnitude, similar to the results of refs. [27,28] . The metallic conductivity and zero resistance are observed simultaneously, signaling the concurrence of metallization and superconducting transition in pressurized GaP.…”

Section: Resultsmentioning

confidence: 99%

“…[24][25][26] Comparing with the systematic investigation of structural evolution under pressure, the study of the electrical transport is limited. [24,27,28] Apart from some electrical transport studies conducted above liquid nitrogen temperature, the low-temperature electrical properties of GaP under pressure are yet unexplored to date.…”

Section: Introductionmentioning

confidence: 99%

Emergence of Two High-pressure Superconducting Phases in Pressurized Optical Semiconductor GaP

Qian

Zhang

Chen

et al. 2023

Preprint

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Pressure engineering in semiconductors leads to a variety of novel physical phenomena and has recently obtained considerable attention. Here we report on pressure-induced superconductivity in III-V gallium phosphide (GaP), a commercially important semiconductor that exhibits excellent optical performances. We show that the emergence of superconductivity is accompanied by concurrence of piezochromic transition and metallization, and can be correlated to a structural transition from cubic to orthorhombic phase. In line with structural origin of the superconductivity, the critical temperature Tc decreases monotonically with increasing pressure up to ~ 50 GPa. Moreover, the superconductivity could be preserved toward ambient pressure because of the irreversibility of the structural transition. Nevertheless, the superconducting transition displays evident broadening associated with the presence of amorphization in the depressurized sample. The synchronous evolution of the structural and electronic properties not only documents a vivid structure–property relationship, but also sheds light on exploring novel functionalities by means of pressure treatment.

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Electronic structure and photoconductivity properties of GaP under high pressure

Zhang

et al. 2023

J Mater Sci

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Electrical Transport Properties of Gallium Phosphide under High Pressure

Cited by 4 publications

References 30 publications

First-Principles Study of the Physical Properties of Novel Polytypes of Gallium Phosphide

First-Principles Study of the Physical Properties of Novel Polytypes of Gallium Phosphide

Emergence of Two High-pressure Superconducting Phases in Pressurized Optical Semiconductor GaP

Electronic structure and photoconductivity properties of GaP under high pressure

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