Electrical transport properties of gate tunable graphene lateral tunnel diodes

Abstract

A detailed study of the electrical transport properties of gate tunable graphene lateral tunnel diodes is presented. The graphene-Al 2 O 3 -graphene lateral tunnel diodes are fabricated on Si/SiO 2 substrates, and the fabricated devices show rectifying characteristics at the low voltage below 1 V. The rectifying behavior can be controlled by applying back gate voltages. As a result, the devices show high asymmetry and strong nonlinearity current-voltage (I-V ) characteristics, which are desirable properties for applications such as optical rectennas and infrared detectors. The electrical transport mechanism of the graphene lateral diodes is analyzed by extracting parameters from the measured I-V characteristics. We find that trap-assisted tunneling from the defect levels in the Al 2 O 3 layer is the most likely mechanism of the forward current of the fabricated graphene lateral diodes.

Probing the Inelastic Electron Tunneling via the Photocurrent in a Vertical Graphene van der Waals Heterostructure

“…The fact that the forward/reverse bias gives rise to a larger I b for a strongly p-/n-doped graphene electrode is consistent with previous observations in similar tunneling heterostructures. 47,48 The transport properties of the We next investigate the tunneling of the photoexcited charge carriers by illuminating the device with a focused laser beam (diameter ∼1.5 μm) at the wavelength λ = 532 nm, which is As shown in Figure 2d, the photocurrent oscillates with V b at V g = 3.5 V (n-doped SLG), displaying positive and negative differential photoconductance alternately in the measured bias voltage range. Two pairs of the peak and valley are observed at V b ≈ ±16 and ±50 mV, respectively.…”

“…The fact that the forward/reverse bias gives rise to a larger I b for a strongly p-/n-doped graphene electrode is consistent with previous observations in similar tunneling heterostructures. 47,48 The transport properties of the device are further analyzed by measuring the gate-dependent I b at different V b values as plotted in Figure 1d. For small V b (Figure 1d inset), I b exhibits ambipolar behavior with a local minimum at V g = 1.4 V, denoting the charge neutral point of the SLG, which shifts with increasing |V b | due to the strong E Fdependent tunneling probability when a large bias voltage is applied.…”

Effect of Coulomb carrier drag and terahertz plasma instability in p+-p-i-n-n+ graphene tunneling transistor structures

“…1(d). Similar G-based structures with the enhanced carrier mobility were fabricated, experimentally studied, and well documented in the literature (see, for example, [15][16][17][18][19][20][21][22][23]).…”

Theoretical Study on Nonreciprocity for Third-Harmonic Generation Process in Nonlinear Photonic Crystals

“…It is an asymmetric transmission, which means that the wave transmits in the opposite two directions in a certain material with different energy properties and phase shifts. In recent years, inspired by the electrical asymmetry of diodes [1], [2], [3], the study of nonreciprocal processes in various physical systems has gradually become a hot issue. For example, a non-Hermitian topology circuit with nonreciprocal effect was constructed, showing the phenomenon of inconsistent energy band structure under open boundary conditions and periodic boundary conditions [4].…”