Electrical transport properties of graphene nanowalls grown at low temperature using plasma enhanced chemical vapor deposition

Zhao, Rong; Ahktar, Meysam; Alruqi, Adel; Dharmasena, Ruchira; Jasiński, Jacek B.; Thantirige, Rukshan; Суманасекера, Гамини

doi:10.1088/2053-1591/aa6ee1

Cited by 16 publications

(15 citation statements)

References 51 publications

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“…Our temperature-dependent EC measurements of NDG up to 400 C resulted in nearly constant values of roughly 2.5 Â 10 4 S m À1 . However, the here-shown polynomial fit indicates a decline of the EC for elevated temperatures, which is in accordance with results published by Zhao et al [13] In Figure 3c, the TC of BDD and NDG is shown. Due to phonon scattering at crystallite boundaries, the TC of microcrystalline BDD is considerably lower than the one of single-crystalline diamond (2000 W m À1 K À1 [14,15] ) yet still two orders of magnitude higher than the TC of NDG.…”

supporting

confidence: 92%

World's First Thermoelectric Generator Made of Tailored Carbon Allotropes

et al. 2020

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supporting

confidence: 92%

World's First Thermoelectric Generator Made of Tailored Carbon Allotropes

et al. 2020

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“…Chen et al reported single crystal hexagonal and dodecagonal patterns on SiO 2 substrate using CH 4 as a precursor via near equilibrium CVD. Few‐layer graphene films on SiO 2 substrate using CH 4 as a precursor via APCVD were demonstrated by Bi et al, whereas Zhao et al investigated the graphene nanowalls on SiO 2 substrate using CH 4 as a precursor via PECVD technique. It was observed that a low temperature (400 °C) direct growth of micrometer‐scale graphene crystals on SiO 2 substrates could be achieved by using PECVD technique.…”

Section: Catalyst‐free Direct Cvd Growth Of Graphene On Technologicalmentioning

confidence: 99%

Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates

et al. 2018

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To fabricate graphene based electronic and optoelectronic devices, it is highly desirable to develop a variety of metal‐catalyst free chemical vapor deposition (CVD) techniques for direct synthesis of graphene on dielectric and semiconducting substrates. This will help to avoid metallic impurities, high costs, time consuming processes, and defect‐inducing graphene transfer processes. Direct CVD growth of graphene on dielectric substrates is usually difficult to accomplish due to their low surface energy. However, a low‐temperature plasma enhanced CVD technique could help to solve this problem. Here, the recent progress of metal‐catalyst free direct CVD growth of graphene on technologically important dielectric (SiO2, ZrO2, HfO2, h‐BN, Al2O3, Si3N4, quartz, MgO, SrTiO3, TiO2, etc.) and semiconducting (Si, Ge, GaN, and SiC) substrates is reviewed. High and low temperature direct CVD growth of graphene on these substrates including growth mechanism and morphology is discussed. Detailed discussions are also presented for Si and Ge substrates, which are necessary for next generation graphene/Si/Ge based hybrid electronic devices. Finally, the technology development of the metal‐catalyst free direct CVD growth of graphene on these substrates is concluded, with future outlooks.

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“…Other useful characterization methods include ultraviolet photoelectron spectroscopy (UPS) for measuring the work function of VG-GNs [176,177], which provides useful information about the doping level of the graphene nanostructures; wettability studies, where the contact angle of a water droplet on the VG-GN sample is determined [72,74]; surface area measurements via nitrogen adsorption Brunauer-Emmett-Teller (BET) method [178]; and electrical transport measurements that determine the resistivity, carrier concentration and electron mobility [61,179,180]. In addition, certain application-specific characterizations, such as the cyclic voltammetry measurements, are carried out to evaluate the performance for energy storage applications.…”

Section: Characterizationmentioning

confidence: 99%

Single-step growth of graphene and graphene-based nanostructures by plasma-enhanced chemical vapor deposition

et al. 2019

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The realization of many promising technological applications of graphene and graphenebased nanostructures depends on the availability of reliable, scalable, high-yield and low-cost synthesis methods. Plasma enhanced chemical vapor deposition (PECVD) has been a versatile technique for synthesizing many carbon-based materials, because PECVD provides a rich chemical environment, including a mixture of radicals, molecules and ions from hydrocarbon precursors, which enables graphene growth on a variety of material surfaces at lower temperatures and faster growth than typical thermal chemical vapor deposition (T-CVD). Here we review recent advances in the PECVD techniques for synthesis of various graphene and graphene-based nanostructures, including horizontal growth of monolayer and multilayer graphene sheets, vertical growth of graphene nanostructures (VG-GNs) such as graphene nanostripes (GNSPs) with large aspect ratios, direct and selective deposition of monolayer and multi-layer graphene on nanostructured substrates, and growth of multi-wall carbon nanotubes (MWCNTs). By properly controlling the gas environment of the plasma, it is found that no active heating is necessary for the PECVD growth processes, and that highyield growth can take place in a single step on a variety of surfaces, including metallic, semiconducting and insulating materials. Phenomenological understanding of the growth mechanisms are described. Finally, challenges and promising outlook for further development in the PECVD techniques for graphene-based applications are discussed.

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Electrical transport properties of graphene nanowalls grown at low temperature using plasma enhanced chemical vapor deposition

Cited by 16 publications

References 51 publications

World's First Thermoelectric Generator Made of Tailored Carbon Allotropes

World's First Thermoelectric Generator Made of Tailored Carbon Allotropes

Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates

Single-step growth of graphene and graphene-based nanostructures by plasma-enhanced chemical vapor deposition

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