a b s t r a c tWe report a single-step growth process of graphene nanostripes (GNSPs) by adding certain substituted aromatics (e.g., 1,2-dichlorobenzene) as precursors during the plasma enhanced chemical vapor deposition (PECVD). Without any active heating and by using low plasma power ( 60 W), we are able to grow GNSPs vertically with high yields up to (13 ± 4) g/m 2 in 20 min. These GNSPs exhibit high aspect ratios (from 10:1 to >~130:1) and typical widths from tens to hundreds of nanometers on various transitionmetal substrates. The morphology, electronic properties and yields of the GNSPs can be controlled by the growth parameters (e.g., the species of seeding molecules, compositions and flow rates of the gases introduced into the plasma, plasma power, and the growth time). Studies of the Raman spectra, scanning electron microscopy images, ultraviolet photoelectron spectroscopy, transmission electron microscopy images, energy-dispersive x-ray spectroscopy and electrical conductivity of these GNSPs as functions of the growth parameters confirm high-quality GNSPs with electrical mobility~10 4 cm 2 /V-s. These results together with residual gas analyzer spectra and optical emission spectroscopy taken during PECVD growth suggest the important roles of both substituted aromatics and hydrogen plasma in the rapid vertical growth of GNSPs with large aspect ratios.

The realization of many promising technological applications of graphene and graphenebased nanostructures depends on the availability of reliable, scalable, high-yield and low-cost synthesis methods. Plasma enhanced chemical vapor deposition (PECVD) has been a versatile technique for synthesizing many carbon-based materials, because PECVD provides a rich chemical environment, including a mixture of radicals, molecules and ions from hydrocarbon precursors, which enables graphene growth on a variety of material surfaces at lower temperatures and faster growth than typical thermal chemical vapor deposition (T-CVD). Here we review recent advances in the PECVD techniques for synthesis of various graphene and graphene-based nanostructures, including horizontal growth of monolayer and multilayer graphene sheets, vertical growth of graphene nanostructures (VG-GNs) such as graphene nanostripes (GNSPs) with large aspect ratios, direct and selective deposition of monolayer and multi-layer graphene on nanostructured substrates, and growth of multi-wall carbon nanotubes (MWCNTs). By properly controlling the gas environment of the plasma, it is found that no active heating is necessary for the PECVD growth processes, and that highyield growth can take place in a single step on a variety of surfaces, including metallic, semiconducting and insulating materials. Phenomenological understanding of the growth mechanisms are described. Finally, challenges and promising outlook for further development in the PECVD techniques for graphene-based applications are discussed.

Selectively pyridinic type nitrogen-doped graphene is fabricated and applied as a lithium ion battery anode including post mortem characterization.