Electrically active hydrogen-implantation-induced defects in Ge crystals and SiGe alloys

Markevich, V. P.; Dobaczewski, L.; Nielsen, K. Bonde; Litvinov, V. V.; Petukh, A. N.; Pokotilo, Yu. M.; Абросимов, Н. В.; Peaker, А. R.

doi:10.1016/j.tsf.2008.08.122

Cited by 3 publications

(3 citation statements)

References 15 publications

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“…In recent years, several studies on electrically active defects related to hydrogen implantation in germanium have been performed using deep level transient spectroscopy ͑DLTS͒. 12 These generally involved implant doses at or below 10 14 atoms/cm 2 . It is therefore necessary to examine implant doses of several orders of magnitude higher than this, similar to those used in a smart-cut process.…”

mentioning

confidence: 99%

Micro-Raman and Spreading Resistance Analysis on Beveled Implanted Germanium for Layer Transfer Applications

Rainey

Wasyluk

Perova

et al. 2011

Electrochem. Solid-State Lett.

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mentioning

confidence: 99%

Micro-Raman and Spreading Resistance Analysis on Beveled Implanted Germanium for Layer Transfer Applications

Rainey

Wasyluk

Perova

et al. 2011

Electrochem. Solid-State Lett.

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“…According to the literature [4], exposure to H 2 plasma and subsequent heat treatment can lead to hydrogen thermal donor (HTD) formation. HTDs were reported to form after implantation of hydrogen ions in Si and SiGe solid solutions [5][6][7][8]. Passivation and formation of electrically active centers during exposure to H 2 plasma was associated with structural defect (platelet) formation due to H 2 precipitation during plasma exposure and Si-H bond formation [9,10].…”

Section: Introductionmentioning

confidence: 99%

“…The Raman and SPM results led to the conclusion that the inhomogeneities observed in Fig. 2a were platelets due to slippage of Si-H x bonds [7][8][9]; the inhomogeneities in Fig. 2b, vacancies fi lled with gaseous molecular H 2 .…”

Section: Introductionmentioning

confidence: 99%

Transformation of Structural Defects and The Hydrogen State Upon Heat Treatment of Hydrogenated Silicon

Pokotilo

Petuh

et al. 2019

J Appl Spectrosc

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Transformations of structural defects, the hydrogen state, and electrophysical properties of silicon treated in hydrogen plasma are studied. Treatment in plasma (150 o C) produces bands in Raman spectra at 2095 and 2129 cm -1 that are associated with scattering by Si-H vibrations. Subsequent heat treatment (275 o C) causes a band for gaseous molecular H 2 to appear at 4153 cm -1 . A comparison of Raman spectra and scanning probe microscopy results shows that hydrogenation forms defects (platelets) of average size 43 nm and surface density 6.5•10 9 cm -2 that are due to precipitation of H 2 and formation of Si-H bonds. Inclusions of average size 115 nm and surface density 1.7•10 9 cm -2 that are fi lled with molecular H 2 are observed after heat treatment. The concentration of free charge carriers remains constant after treatment in plasma and subsequent heat treatment.

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Formation of donors in germanium–silicon alloys implanted with hydrogen ions with different energies

et al. 2016

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Electrically active hydrogen-implantation-induced defects in Ge crystals and SiGe alloys

Cited by 3 publications

References 15 publications

Micro-Raman and Spreading Resistance Analysis on Beveled Implanted Germanium for Layer Transfer Applications

Micro-Raman and Spreading Resistance Analysis on Beveled Implanted Germanium for Layer Transfer Applications

Transformation of Structural Defects and The Hydrogen State Upon Heat Treatment of Hydrogenated Silicon

Formation of donors in germanium–silicon alloys implanted with hydrogen ions with different energies

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