2012
DOI: 10.1021/la204393h
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Electrically Conducting Nanopatterns Formed by Chemical e-Beam Lithography via Gold Nanoparticle Seeds

Abstract: We report the formation of thiol nanopatterns on SAM covered silicon wafers by converting sulfonic acid head groups via e-beam lithography. These thiol groups act as binding sites for gold nanoparticles, which can be enhanced to form electrically conducting nanostructures. This approach serves as a proof-of-concept for the combination of top-down and bottom-up processes for the generation of electrical devices on silicon.

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Cited by 24 publications
(16 citation statements)
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“…This method involves assembly of atoms (produce by reduction of ions) into desired nanostructures. Top down methods such as photolithography and electron beam lithography (86,87), requires the removal of matter from the bulk material to get the desired nanostructure. While both methods can generate AuNPs of desired shape and size, each have their own drawbacks, (e.g., poor monodispersity in case of bottom up methods, and extensive waste of material in top down methods).…”
Section: Synthetic Methods For Gold Nanoparticlementioning
confidence: 99%
“…This method involves assembly of atoms (produce by reduction of ions) into desired nanostructures. Top down methods such as photolithography and electron beam lithography (86,87), requires the removal of matter from the bulk material to get the desired nanostructure. While both methods can generate AuNPs of desired shape and size, each have their own drawbacks, (e.g., poor monodispersity in case of bottom up methods, and extensive waste of material in top down methods).…”
Section: Synthetic Methods For Gold Nanoparticlementioning
confidence: 99%
“…Following the protocol we published previously [13], we studied the reduction of 2-(4-chlorosulfonylphenyl)ethyltrichlorosilane (CSPETCS) SAMs on top of electron-transparent SiO 2 layers. For this we used SiO 2 membranes, which are commonly used in SEM-T and TEM experiments (Fig.…”
Section: Resultsmentioning
confidence: 99%
“…Thereby, CSPETCS SAMs with a thickness down to 1.3 ± 0.1 nm could be fabricated. Upon irradiation with electrons these monolayers can be locally reduced converting the top sulfonic acid group into a thiol group [13]. …”
Section: Resultsmentioning
confidence: 99%
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“…[1][2][3] To fabricate functional devices using metal NPs, it is essential to form well-defined ordered arrays of NPs at the microor nano-scale. [4][5][6] Thus, diverse methodologies including lithographic patterning using UV and electron beams, 7 8 soft lithography, 9 colloidal lithography, 10 a self-assembled template method, 11 inkjet printing, 12 and other methods have been reported to pattern metal NPs on various types of substrates. In spite of these advances, a more accurate, lower-cost, and high-trough method has been required for practical applications.…”
Section: Introductionmentioning
confidence: 99%