Electrically controlled non-volatile switching of magnetism in multiferroic heterostructures via engineered ferroelastic domain states

Abstract

In this work we addressed a key challenge in realizing multiferroics-based reconfigurable magnetic devices, which is the ability to switch between distinct collective magnetic states in a reversible and stable manner with a control voltage. Three possible non-volatile switching mechanisms have been demonstrated, arising from the nature of the domain states in pervoskite PZN-PT crystal that the ferroelectric polarization reversal is partially coupled to the ferroelastic strain. Electric impulse non-volatile control of magnetic anisotropy in FeGaB/PZN-PT and domain distribution of FeGaB during the ferroelectric switching have been observed, which agrees very well with simulation results. These approaches provide a platform for realizing electric impulse non-volatile tuning of the order parameters that are coupled to the lattice strain in thin-film heterostructures, showing great potentials in achieving reconfigurable, compact, light-weight and ultra-low-power electronics.

Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling

“…To date, only a few experimental trials with small and volatile manipulation of MR in MTJs by electric fields have been reported 42,43 . Non-volatile electrically controlled magnetism 44–47 was demonstrated in multiferroic heterostructures, however, it has not been used in spintronic devices. Therefore, room temperature, giant, and non-volatile electrical manipulation of MR in MTJs without a bias magnetic field is highly desirable, while still elusive, though it would be a crucial step towards practical devices such as MRAM.…”

Bulk-like dielectric and magnetic properties of sub 100 nm thick single crystal Cr2O3 films on an epitaxial oxide electrode

“…Magnetoelectric and multiferroic heterostructures have been of interest due to their potential for low-power, non-volatile spintronic devices utilizing the electric field control of magnetism [1][2][3][4][5][6][7] . Antiferromagnetic Cr 2 O 3 is a promising candidate for such applications.…”

Understanding and designing magnetoelectric heterostructures guided by computation: progresses, remaining questions, and perspectives

“…Furthermore, employing a ferroelectric may result in a larger piezostrain via ferroelastic switching (i.e., non-180°polarization switching) 37,38 or structural phase transition. [39][40][41][42][43] A controllable ferroelastic switching, however, is much more difficult to achieve. Phase-field models have been developed to understand how ferroelastic switching in ferroelectrics influences the magnetic domain switching 44 and magnetic domain-wall motion 45 in an overlaid magnet.…”