Electrically Defined Ferromagnetic Nanodots

Chiba, Daichi; Matsukura, F.; Ohno, Hideo

doi:10.1021/nl102379h

Cited by 13 publications

(9 citation statements)

References 30 publications

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“…A positive gate electric field induces a local magnetic phase transition (Fig. 2a) 35 . The magnetization curve derived from anomalous Hall resistance measurements shows a pronounced constriction near zero magnetic field (Fig.…”

Section: Electrical Manipulation Of Magnetism In Ferromagnetsmentioning

confidence: 99%

Control of magnetism by electric fields

2015

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The electrical manipulation of magnetism and magnetic properties has been achieved across a number of different material systems. For example, applying an electric field to a ferromagnetic material through an insulator alters its charge-carrier population. In the case of thin films of ferromagnetic semiconductors, this change in carrier density in turn affects the magnetic exchange interaction and magnetic anisotropy; in ferromagnetic metals, it instead changes the Fermi level position at the interface that governs the magnetic anisotropy of the metal. In multiferroics, an applied electric field couples with the magnetization through electrical polarization. This Review summarizes the experimental progress made in the electrical manipulation of magnetization in such materials, discusses our current understanding of the mechanisms, and finally presents the future prospects of the field.

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Section: Electrical Manipulation Of Magnetism In Ferromagnetsmentioning

confidence: 99%

Control of magnetism by electric fields

2015

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“…Voltage control of the magnetic phase transition in FM semiconductors was first observed in (In,Mn)As, as reflected by the modulation of an anomalous Hall effect (AHE) [16]. Subsequently, the T C , magnetic moment, magnitude, and sign of the AHE coefficient of (Ga,Mn)As were changed by the electric field in a series of works [96][97][98][99][100][101][102][103][104]. Nevertheless, the low intrinsic T C somehow limits the application of (In,Mn)As and (Ga,Mn)As, which also inspired much research aimed at the improvement of T C in these systems through various means such as the proximity effect [105].…”

Section: Magnetic Semiconductorsmentioning

confidence: 99%

Recent progress in voltage control of magnetism: Materials, mechanisms, and performance

Song

Cui

et al. 2017

Progress in Materials Science

410

267

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Voltage control of magnetism (VCM) is attracting increasing interest and exciting significant research activity driven by its profound physics and enormous potential for application. This review article aims to provide a comprehensive review of recent progress in VCM in different thin films. We first present a brief summary of the modulation of magnetism by electric fields and describe its discovery, development, classification, mechanism, and potential applications. In the second part, we focus on the classification of VCM from the viewpoint of materials, where both the magnetic medium and dielectric gating materials, and their influences on magnetic modulation efficiency are systematically described. In the third part, the nature of VCM is discussed in detail, including the conventional mechanisms of charge, strain, and exchange coupling at the interfaces of heterostructures, as well as the emergent models of orbital reconstruction and electrochemical effect. The fourth part mainly illustrates the typical performance characteristics of VCM, and discusses, in particular, * Corresponding author. Tel: +86-10-62781275; fax: +86-10-62771160 E-mail address: songcheng@mail.tsinghua.edu.cn † Present at Max-Planck Institute of Microstructure Physics, Weinberg 2, D-06120Halle, Germany 2 its promising application for reducing power consumption and realizing high-density memory in several device configurations. The present review concludes with a discussion of the challenges and future prospects of VCM, which will inspire more in-depth research and advance the practical applications of this field.

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“…[34] Following studies focused on (Ga,Mn)As thin films gated with dielectric ZrO 2 [134] or ferroelectric P(VDF-TrFE). Afterward, nanodots of (Ga,Mn)As [136] and quantum dots of (Mn 0.05 Ge 0.95 ), [137] respectively gated with HfO 2 and Al 2 O 3 dielectrics, were studied as well. Afterward, nanodots of (Ga,Mn)As [136] and quantum dots of (Mn 0.05 Ge 0.95 ), [137] respectively gated with HfO 2 and Al 2 O 3 dielectrics, were studied as well.…”

Section: Me Coupling Via Charge Carrier Dopingmentioning

confidence: 99%

“…[135] The latter demonstrated an overall shift in T C of ≈4 K together with nonvolatility of the ME effect. Afterward, nanodots of (Ga,Mn)As [136] and quantum dots of (Mn 0.05 Ge 0.95 ), [137] respectively gated with HfO 2 and Al 2 O 3 dielectrics, were studied as well. Despite the remarkable achievements, the main factor preventing the use of magnetic semiconductors in practical applications is the low temperature ferromagnetism (typically manifested below 100 K).…”

Section: Me Coupling Via Charge Carrier Dopingmentioning

confidence: 99%

Voltage‐Control of Magnetism in All‐Solid‐State and Solid/Liquid Magnetoelectric Composites

2019

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activities. [1][2][3][4][5][6][7][8][9][10][11][12] From a technological perspective, several low-power ME applications have been envisioned, comprising devices for memory storage and processing, [13,14] tuning and filtering of RF/microwave signals, [15,16] energy conversion and harvesting, [17,18] sensing, [19,20] and actuation. [21,22] By definition, the direct ME effect is manifested when an electric polarization P is induced by usage of a magnetic field H in accordance with Δ Δ to compare the strength of the interaction between electricity and magnetism among different magnetoelectric systems. chemical control of the physical (magnetic) properties in metals and oxide nanostructures; electrostatic doping via field-effect; reversible magnetic phase transitions induced with ionic liquid charging; spintronics; printed electronics; fabrication of solution-processed devices (transistors, etc.)There are some nontrivial reasons explaining why solid/ liquid ME composites developed later than all-solid-state approaches. From an experimental perspective, the usage of conventional aqueous electrolytes poses some restrictions in terms of the operating conditions. Concerning the applied voltage, water electrolysis already occurs at a low voltage of

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Electrically Defined Ferromagnetic Nanodots

Cited by 13 publications

References 30 publications

Control of magnetism by electric fields

Control of magnetism by electric fields

Recent progress in voltage control of magnetism: Materials, mechanisms, and performance

Voltage‐Control of Magnetism in All‐Solid‐State and Solid/Liquid Magnetoelectric Composites

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