Electrically Detected Electron Spin Resonance in a High-Mobility Silicon Quantum Well

Matsunami, Junya; Ooya, Mitsuaki; Okamoto, Tohru

doi:10.1103/physrevlett.97.066602

Cited by 33 publications

(29 citation statements)

References 27 publications

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“…Spin relaxation can be suppressed by cyclotron motion as demonstrated by Wilamowski et al [622]. Spin relaxation in the quantum Hall regime was studied by Matsunami et al [782].…”

Section: Spin Relaxation In Silicon and Germanium In The Metallic Regimementioning

confidence: 94%

“…Like that in bulk silicon, spin relaxation in two-dimensional silicon structures was also studied mostly via electron spin resonance [295][296][297]622,[774][775][776][777][778][779][780]. Recently, electrically detected spin resonance has also been developed and applied to silicon two-dimensional structures [287,781,782].…”

Section: Spin Relaxation In Silicon and Germanium In The Metallic Regimementioning

confidence: 99%

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Spin dynamics in semiconductors

2010

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This article reviews the current status of spin dynamics in semiconductors which has achieved a lot of progress in the past years due to the fast growing field of semiconductor spintronics. The primary focus is the theoretical and experimental developments of spin relaxation and dephasing in both spin precession in time domain and spin diffusion and transport in spacial domain. A fully microscopic many-body investigation on spin dynamics based on the kinetic spin Bloch equation approach is reviewed comprehensively.Comment: a review article with 193 pages and 1103 references. To be published in Physics Reports

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“…Spin relaxation can be suppressed by cyclotron motion as demonstrated by Wilamowski et al [622]. Spin relaxation in the quantum Hall regime was studied by Matsunami et al [782].…”

Section: Spin Relaxation In Silicon and Germanium In The Metallic Regimementioning

confidence: 94%

Section: Spin Relaxation In Silicon and Germanium In The Metallic Regimementioning

confidence: 99%

Spin dynamics in semiconductors

2010

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“…22(a). Collective transverse spin coherence time (T Ã 2 ) was then estimated from the FWHM of the ESR peaks 115,116 as T…”

Section: G Spin Coherence Timementioning

confidence: 99%

Challenges and opportunities of ZnO-related single crystalline heterostructures

Kozuka

Tsukazaki

Kawasaki

2014

Applied Physics Reviews

131

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Recent technological advancement in ZnO heterostructures has expanded the possibility of device functionalities to various kinds of applications. In order to extract novel device functionalities in the heterostructures, one needs to fabricate high quality films and interfaces with minimal impurities, defects, and disorder. With employing molecular-beam epitaxy (MBE) and single crystal ZnO substrates, the density of residual impurities and defects can be drastically reduced and the optical and electrical properties have been dramatically improved for the ZnO films and heterostructures with Mg x Zn 1-x O. Here, we overview such recent technological advancement from various aspects of application. Towards optoelectronic devices such as a light emitter and a photodetector in an ultraviolet region, the development of p-type ZnO and the fabrication of excellent Schottky contact, respectively, have been subjected to intensive studies for years. For the former, the fine tuning of the growth conditions to make Mg x Zn 1-x O as intrinsic as possible has opened the possibilities of making p-type Mg x Zn 1-x O through NH 3 doping method. For the latter, conducting and transparent polymer films spin-coated on Mg x Zn 1-x O was shown to give almost ideal Schottky junctions. The wavelength-selective detection can be realized with varying the Mg content. From the viewpoint of electronic devices, two-dimensional electrons confined at the Mg x Zn 1-x O/ZnO interfaces are promising candidate for quantum devices becauseof high electron mobility and strong electron-electron correlation effect. These wonderful features and tremendous opportunities in ZnO-based heterostructures make this system unique and promising in oxide electronics and will lead to new quantum functionalities in optoelectronic devices and electronic applications with lower energy consumption and high performance.

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“…The third mechanism we consider here results from the polarization dependence of the 2DEG resistivity [13][14][15], as was found to be the case for the EDMR of high mobility silicon 2DEGs [16,17]. Under this mechanism, donor electrons can contribute to a resonant change in 2DEG resistivity as the donor polarization is transferred to the 2DEG spin system via exchange scattering ( Fig.…”

mentioning

confidence: 89%

Electrically Detected Magnetic Resonance of Neutral Donors Interacting with a Two-Dimensional Electron Gas

Lang

George

et al. 2011

Phys. Rev. Lett.

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We have measured the electrically detected magnetic resonance of channel-implanted donors in silicon field-effect transistors in resonant X-(9.7 GHz) and W-band (94 GHz) microwave cavities, with corresponding Zeeman fields of 0.35 T and 3.36 T, respectively. It is found that the conduction electron resonance signal increases by two orders of magnitude from X-to W-band, while the hyperfine-split donor resonance signals are enhanced by over one order of magnitude. We rule out a bolometric origin of the resonance signals, and find that direct spin-dependent scattering between the two-dimensional electron gas and neutral donors is inconsistent with the experimental observations. We propose a new polarization transfer model from the donor to the conduction electrons as the main contributer to the spin resonance signals observed.Electrical spin-state detection for solid-state qubits requires a detection channel formed by conduction electrons in close proximity to the qubit. For electron spin qubits, the detection channels usually consist of quantum point contacts or single electron transistors, which are sensitive to the electrostatic environment nearby and able to detect the spin-dependent occupancies of electrons at the qubit site [1][2][3][4]. Alternatively, for nuclear spin qubits such as shallow donors in silicon [5], it was proposed that conduction electrons interacting directly with the neutral donors can be used for nuclear spin-state readout [6], as the conduction and neutral donor electrons undergo spindependent scattering [7][8][9][10][11]. Donor-doped metal-oxidesemiconductor (MOS) devices provide an ideal platform for the detection of such an interaction, as the electronic wavefunction of neutral donors embedded in the device channel can overlap with the nearby gate-induced twodimensional electron gas (2DEG) (Fig. 1(a)). The donor-2DEG interaction can be probed by electrically detected magnetic resonance (EDMR) experiments with the MOS system, as was first reported by Ghosh and Silsbee [7]. However, the use of bulk-doped silicon with a relatively high donor concentration resulted in significant overlap between the donor and 2DEG electron resonance signals, complicating the analysis of the results. In addition, their measurements were limited to a low magnetic field of ∼ 0.35 T. In this Letter, we clarify the mechanisms behind the EDMR signals of such donordoped MOS devices by studying the change in EDMR signal intensities at different magnetic fields. We perform EDMR with accumulation-mode n-type field-effect * Both authors contributed to this work equally. Please contact the corresponding author under cclo@eecs.berkeley.edu.

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Electrically Detected Electron Spin Resonance in a High-Mobility Silicon Quantum Well

Cited by 33 publications

References 27 publications

Spin dynamics in semiconductors

Spin dynamics in semiconductors

Challenges and opportunities of ZnO-related single crystalline heterostructures

Electrically Detected Magnetic Resonance of Neutral Donors Interacting with a Two-Dimensional Electron Gas

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