Electrically driven luminescence of nanocrystalline Si/SiO2 multilayers on various substrates

Wang, T.; Wei, Dong; Sun, Hongcheng; Liu, Y.; Chen, D.Y.; Chen, G.R.; Xu, Jun; Li, Wenshen; Ma, Zhongyuan; Xu, Ling; Chen, K.J.

doi:10.1016/j.physe.2008.08.001

Cited by 5 publications

(2 citation statements)

References 19 publications

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“…Red or near infrared emission has been observed in these structures and has been related to both excitonic recombination taking place in conined states within Si-nps or relaxation of hot electrons [25,26].…”

Section: Introductionmentioning

confidence: 99%

Luminescent Devices Based on Silicon-Rich Dielectric Materials

Cabañas-Tay¹,

Palacios-Huerta²,

Aceves-Mijares³

et al. 2016

Luminescence - An Outlook on the Phenomena and Their Applications

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Luminescent silicon-rich dielectric materials have been under intensive research due to their potential applications in optoelectronic devices. Silicon-rich nitride (SRN) and silicon-rich oxide (SRO) ilms have been mostly studied because of their high luminescence and compatibility with the silicon-based technology. In this chapter, the luminescent characteristics of SRN and SRO ilms deposited by low-pressure chemical vapor deposition are reviewed and discussed. SRN and SRO ilms, which exhibit the strongest photoluminescence (PL), were chosen to analyze their electrical and electroluminescent (EL) properties, including SRN/SRO bilayers. Light emiting capacitors (LECs) were fabricated with the SRN, SRO, and SRN/SRO ilms as the dielectric layer. SRN-LECs emit broad EL spectra where the maximum emission peak blueshifts when the polarity is changed. On the other hand, SRO-LECs with low silicon content (~39 at.%) exhibit a resistive switching (RS) behavior from a high conduction state to a low conduction state, which produce a long spectrum blueshift (~227 nm) between the EL and PL emission. When the silicon content increases, red emission is observed at both EL and PL spectra. The RS behavior is also observed in all SRN/SRO-LECs enhancing an intense ultraviolet EL. The carrier transport in all LECs is analyzed to understand their EL mechanism.

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Section: Introductionmentioning

confidence: 99%

Luminescent Devices Based on Silicon-Rich Dielectric Materials

Cabañas-Tay¹,

Palacios-Huerta²,

Aceves-Mijares³

et al. 2016

Luminescence - An Outlook on the Phenomena and Their Applications

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“…Both photoluminescence and electroluminescence properties have been studied. [17,18] In the present work, we prepare phosphorous-doped (P-doped) a-Si:H/SiO 2 multilayer structures and study the light emission in both visible and infrared regions after thermal annealing at various temperatures. It is found that under the moderate annealing temperature (800-900 ∘ C) a strong sub-band light emission in the range 1.1-1.8 µm can be observed at room temperature, which is tentatively ascribed to the defect-related mechanism.…”

mentioning

confidence: 99%

Subband Light Emission from Phosphorous-Doped Amorphous Si/SiO ₂ Multilayers at Room Temperature

Sun¹,

Xu²,

Liu³

et al. 2011

Chinese Phys. Lett.

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Phosphorous-doped hydrogenated amorphous Si/SiO2 multilayer structures are fabricated in a plasma enhanced chemical vapor deposition system. The microstructural and luminescence properties of the samples are characterized after annealing at various temperatures. Under the onset crystallization temperature 800-900 ∘ C, a strong subband infrared light emission in the range 1.1-1.8 𝜇m is observed at room temperature instead of the usually observed visible light emission. This subband infrared emission is gradually enhanced with the increase of phosphorus doping concentration, which can be ascribed to the increase of the luminescent defect states promoted by the doped phosphorous atoms.

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Formation and properties of high density Si nanodots

Chen

Song

et al. 2010

Applied Surface Science

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Electrically driven luminescence of nanocrystalline Si/SiO2 multilayers on various substrates

Cited by 5 publications

References 19 publications

Luminescent Devices Based on Silicon-Rich Dielectric Materials

Luminescent Devices Based on Silicon-Rich Dielectric Materials

Subband Light Emission from Phosphorous-Doped Amorphous Si/SiO ₂ Multilayers at Room Temperature

Formation and properties of high density Si nanodots

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Electrically driven luminescence of nanocrystalline Si/SiO2 multilayers on various substrates

Cited by 5 publications

References 19 publications

Luminescent Devices Based on Silicon-Rich Dielectric Materials

Luminescent Devices Based on Silicon-Rich Dielectric Materials

Subband Light Emission from Phosphorous-Doped Amorphous Si/SiO 2 Multilayers at Room Temperature

Formation and properties of high density Si nanodots

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Product

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About

Subband Light Emission from Phosphorous-Doped Amorphous Si/SiO ₂ Multilayers at Room Temperature