Subband Light Emission from Phosphorous-Doped Amorphous Si/SiO
                    <sub>2</sub>
                    Multilayers at Room Temperature

Sun, Hongcheng; Xu, Jun; Liu, Yu; Mu, Weiwei; Xu, Wei; Chen, Kunji

doi:10.1088/0256-307x/28/6/067802

Cited by 15 publications

(8 citation statements)

References 26 publications

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“…demonstrated that Si microcavities with erbium ion implanted can emit light at 1550 nm which is a good match for the optical telecommunication 26 . Recently, it was reported that the subband light emission can be obtained in impurity-doped Si NCs, which provided a new approach to get the Si-based light emitter with the suitable wavelength 27 28 . However, the further utilization of Si NCs in future optoelectronic devices needs a deep understanding of the doping behaviors and the role of dopants on the electronic structure and optical properties of Si NCs, which has not been fully investigated so far.…”

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confidence: 99%

Phosphorus Doping in Si Nanocrystals/SiO2 Multilayers and Light Emission with Wavelength Compatible for Optical Telecommunication

Lü

et al. 2016

Sci Rep

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Doping in semiconductors is a fundamental issue for developing high performance devices. However, the doping behavior in Si nanocrystals (Si NCs) has not been fully understood so far. In the present work, P-doped Si NCs/SiO2 multilayers are fabricated. As revealed by XPS and ESR measurements, P dopants will preferentially passivate the surface states of Si NCs. Meanwhile, low temperature ESR spectra indicate that some P dopants are incorporated into Si NCs substitutionally and the incorporated P impurities increase with the P doping concentration or annealing temperature increasing. Furthermore, a kind of defect states will be generated with high doping concentration or annealing temperature due to the damage of Si crystalline lattice. More interestingly, the incorporated P dopants can generate deep levels in the ultra-small sized (~2 nm) Si NCs, which will cause a new subband light emission with the wavelength compatible with the requirement of the optical telecommunication. The studies of P-doped Si NCs/SiO2 multilayers suggest that P doping plays an important role in the electronic structures and optoelectronic characteristics of Si NCs.

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Phosphorus Doping in Si Nanocrystals/SiO2 Multilayers and Light Emission with Wavelength Compatible for Optical Telecommunication

Lü

et al. 2016

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“…For elemental semiconductor NCs such as Si NCs gas‐phase doping has been found to be effective . It has been shown that the structural, electronic, and optical properties of Si NCs can be tuned by doping …”

Section: Introductionmentioning

confidence: 99%

Structures, Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

Gao

Wang

et al. 2016

Part & Part Syst Charact

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The doping of semiconductor nanocrystals (NCs) is crucial for the optimization of the performance of devices based on them. In contrast to recent progress on the doping of compound semiconductor NCs and silicon NCs, the doping of germanium (Ge) NCs has lagged behind. Here it is shown that Ge NCs can be doped with phosphorus (P) during synthesis by a nonthermal plasma. It is found that there are more P atoms in the NC near‐surface region than in the NC core. P doping modifies the surface state of Ge NCs. Compressive strain can be incuced in Ge NCs by P which can explain the P‐doping‐enhanced oxidation resistance of Ge NCs. Stable dispersions of P‐doped Ge NCs in acetonitrile can be cast to produce films for field‐effect transistors (FETs). FET analysis shows that the electrical conductivity and electron mobility of a Ge‐NC film increase with the increase of the P doping level, although the electrical activation efficiency of P in the Ge‐NC film is low. Finally, atomic layer deposition of aluminum oxide at the surface of P‐doped Ge NCs is shown to improve the performance of the FETs.

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“…Whether the energy levels induced by B (especially B configurations concerned in Figure 4(a)) is radiative or not should be more carefully investigated to evaluate the correctness of Sugimoto et al's proposal. Sun et al have also found pronounced low-energy (∼0.95 eV) light emission from P-doped Si NCs [23]. They believed that the low-energy light emission originated from intrinsic defects in Si NCs.…”

Section: Remarks and Outlooksmentioning

confidence: 97%

“…It is well known that boron (B) and phosphorus (P) are the most widely used p-type and n-type dopants for bulk Si, respectively [10]. This leads to the doping of Si NCs by routinely using B and P [11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26]. In fact, concerns about unintentionally incorporated B and P in Si NCs appeared shortly after the discovery of efficient room-temperature light emission from porous Si, in which Si NCs were present [27][28][29].…”

Section: Introductionmentioning

confidence: 99%

Doping Silicon Nanocrystals with Boron and Phosphorus

2012

Journal of Nanomaterials

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The properties of silicon nanocrystals (Si NCs) that are usually a few nanometers in size can be exquisitely tuned by boron (B) and phosphorus (P) doping. Recent progress in the simulation of B- and P-doped Si NCs has led to improved explanation for B- and P-doping-induced changes in the optical properties of Si NCs. This is mainly enabled by comprehensive investigation on the locations of B and P in Si NCs and the electronic properties of B- and P-doped Si NCs. I remarks on the implications of newly gained insights on B- and P-doped Si NCs. Continuous research to advance the understanding of the doping of Si NCs with B and P is envisioned.

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Subband Light Emission from Phosphorous-Doped Amorphous Si/SiO ₂ Multilayers at Room Temperature

Cited by 15 publications

References 26 publications

Phosphorus Doping in Si Nanocrystals/SiO2 Multilayers and Light Emission with Wavelength Compatible for Optical Telecommunication

Phosphorus Doping in Si Nanocrystals/SiO2 Multilayers and Light Emission with Wavelength Compatible for Optical Telecommunication

Structures, Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

Doping Silicon Nanocrystals with Boron and Phosphorus

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Subband Light Emission from Phosphorous-Doped Amorphous Si/SiO 2 Multilayers at Room Temperature

Cited by 15 publications

References 26 publications

Phosphorus Doping in Si Nanocrystals/SiO2 Multilayers and Light Emission with Wavelength Compatible for Optical Telecommunication

Phosphorus Doping in Si Nanocrystals/SiO2 Multilayers and Light Emission with Wavelength Compatible for Optical Telecommunication

Structures, Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

Doping Silicon Nanocrystals with Boron and Phosphorus

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Product

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Subband Light Emission from Phosphorous-Doped Amorphous Si/SiO ₂ Multilayers at Room Temperature