2016
DOI: 10.1038/srep22888
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Phosphorus Doping in Si Nanocrystals/SiO2 Multilayers and Light Emission with Wavelength Compatible for Optical Telecommunication

Abstract: Doping in semiconductors is a fundamental issue for developing high performance devices. However, the doping behavior in Si nanocrystals (Si NCs) has not been fully understood so far. In the present work, P-doped Si NCs/SiO2 multilayers are fabricated. As revealed by XPS and ESR measurements, P dopants will preferentially passivate the surface states of Si NCs. Meanwhile, low temperature ESR spectra indicate that some P dopants are incorporated into Si NCs substitutionally and the incorporated P impurities inc… Show more

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Cited by 58 publications
(69 citation statements)
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“…DMPO-ESR spin trapping spectrum was used to detect ·OH and ·O 2 − in solution 71,72 . As shown in Figure.…”
Section: Resultsmentioning
confidence: 99%
“…DMPO-ESR spin trapping spectrum was used to detect ·OH and ·O 2 − in solution 71,72 . As shown in Figure.…”
Section: Resultsmentioning
confidence: 99%
“…13, top panel). In the case of P, the XPS spectra suggested that most of the P atoms were located in the Si layer and at the Si/SiO 2 interface [205] (see Fig. 13, bottom right panel).…”
Section: Matrix-embedded Nanocrystalsmentioning
confidence: 99%
“…It has been recently shown that doping is a critical means to realize the full potential of Si NCs [16][17][18][19]. For example, low-energy light emission related to the transitions of electrons from the band edge to the defect state has been observed in boron (B)-and phosphorus (P)-doped Si NCs [20][21][22][23], leading to enhanced tunability of the light emission from Si NCs. In addition, heavy B and P doping have enabled localized surface plasmon resonance (LSPR) for Si NCs [24][25][26][27][28].…”
Section: Introductionmentioning
confidence: 99%