Electrically Driven Spin Resonance in Silicon Carbide Color Centers

Klimov, Paul V.; Falk, Abram L.; Buckley, Bob B.; Awschalom, D. D.

doi:10.1103/physrevlett.112.087601

Cited by 88 publications

(91 citation statements)

References 41 publications

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“…As a model system, we consider a silicon vacancy (V Si ) in silicon carbide (SiC) [17][18][19][20]. Due to the polymorphism of SiC, there is a large variety of vacancy-related defects with appealing quantum properties [16,[21][22][23][24][25][26][27][28][29][30][31][32][33]. All experiments presented here have been performed at room temperature on a 4H-SiC bulk crystal, possessing hexagonal lattice structure.…”

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confidence: 99%

High-Precision Angle-Resolved Magnetometry with Uniaxial Quantum Centers in Silicon Carbide

et al. 2015

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We show that uniaxial color centers in silicon carbide with hexagonal lattice structure can be used to measure not only the strength but also the polar angle of the external magnetic field with respect to the defect axis with high precision. The method is based on the optical detection of multiple spin resonances in the silicon vacancy defect with quadruplet ground state. We achieve a perfect agreement between the experimental and calculated spin resonance spectra without any fitting parameters, providing angle resolution of a few degrees in the magnetic field range up to several millitesla. Our approach is suitable for ensembles as well as for single spin-3/2 color centers, allowing for vector magnetometry on the nanoscale at ambient conditions. PACS numbers: 76.30. Mi, 71.70.Ej, 76.70.Hb, 61.72.jd Optically addressable atomic-scale spin centers constitute the basis for nanomagnetometry with high sensitivity and high spatial resolution [1,2]. The most prominent example is the nitrogen-vacancy (NV) defect in diamond and several benchmark experiments have been performed using this system [3][4][5], including proton nuclear magnetic resonance on the nanometer scale [6,7]. The principle of magnetometry with spin-carrying color centers is based on optical detection of magnetic resonance (ODMR), subject to external magnetic field. In case of individual NV defects with spin S = 1, the projection of the magnetic field on the defect axis is measured. The NV defect in the diamond cubic lattice is oriented along one out of four 111 crystallographic axes and, therefore, using ensemble experiments the magnetic field vector B can be reconstructed [8,9]. Ensembles of the NV defects are also suggested for the implementation of high precision magnetic field sensors with femtotesla sensitivity [10,11] and solid-state frequency standards [12]. These implementations require high homogeneity of the NV centers. The NV defects can be fabricated with preferential alignment [13,14], and using nonlinear shift of the ODMR lines in relatively high magnetic fields of several tens of millitesla the transverse field component can be reconstructed [15]. However, in many demanding applications much lower magnetic fields should be detected, and the information on the magnetic field orientation is difficult to extract in this approach.Here, we demonstrate an alternative approach to implement vector magnetometry for magnetic fields below several millitesla, which is suitable for ensemble as well as for individual uniaxial spin centers with S = 3/2 [16]. As a model system, we consider a silicon vacancy (V Si ) in silicon carbide (SiC) [17][18][19][20]. Due to the polymorphism of SiC, there is a large variety of vacancy-related defects with appealing quantum properties [16,[21][22][23][24][25][26][27][28][29][30][31][32][33]. All experiments presented here have been performed at room temperature on a 4H-SiC bulk crystal, possessing hexagonal lattice structure. The crystal has been grown by the standard sublimation technique, such that the [0001]...

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confidence: 99%

High-Precision Angle-Resolved Magnetometry with Uniaxial Quantum Centers in Silicon Carbide

et al. 2015

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“…where (22) is the Floquet matrix or Floquet Hamiltonian, and we introduced the Fourier components H (n) of the Hamiltonian via…”

Section: B Floquet Methodsmentioning

confidence: 99%

“…For example, if an electron spin is electrostatically confined in a quantum dot (QD), then an ac electric field can be easily created by applying an ac voltage component of the confinement gate electrodes. Along these lines, electrically driven spin resonance [5][6][7][8][9][10][11] (EDSR) of individual electron spins was demonstrated in a variety of materials [12][13][14][15][16][17][18][19][20][21][22][23]. As the ac electric field couples to the orbital degree of freedom of the electron and has no direct effect on the spin, a sufficiently strong coupling mechanism between the orbit and spin is required for EDSR.…”

Section: Introductionmentioning

confidence: 99%

Subharmonic transitions and Bloch-Siegert shift in electrically driven spin resonance

2015

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We theoretically study coherent subharmonic (multiphoton) transitions of a harmonically driven spin. We consider two cases: magnetic resonance (MR) with a misaligned, i.e., nontransversal, driving field, and electrically driven spin resonance (EDSR) of an electron confined in a one-dimensional, parabolic quantum dot, subject to Rashba spin-orbit interaction. In the EDSR case, we focus on the limit where the orbital level spacing of the quantum dot is the greatest energy scale. Then, we apply time-dependent Schrieffer-Wolff perturbation theory to derive a time-dependent effective two-level Hamiltonian, allowing us to describe both MR and EDSR using the Floquet theory of periodically driven two-level systems. In particular, we characterize the fundamental (singlephoton) and the half-harmonic (two-photon) spin transitions. We demonstrate the appearance of two-photon Rabi oscillations, and analytically calculate the fundamental and half-harmonic resonance frequencies and the corresponding Rabi frequencies. For EDSR, we find that both the fundamental and the half-harmonic resonance frequencies change upon increasing the strength of the driving electric field, which is an effect analogous to the Bloch-Siegert shift known from MR. Remarkably, the drive-strength-dependent correction to the fundamental EDSR resonance frequency has an anomalous, negative sign, in contrast to the corresponding Bloch-Siegert shift in MR which is always positive. Our analytical results are supported by numerical simulations, as well as by qualitative interpretations for simple limiting cases.

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“…The spin separation required to achieve strong dipolar coupling between spins is of the order of tens of nanometres. Electric fields can be confined on similar length scales; therefore, electrically driven spin resonance methods can be used to manipulate the defect spin state [79]. Divacancy defects in 4H-and 6H-SiC possess a spin-dependent optical cycle, which allows non-resonant laser illumination to polarise first and then read out its ground-state spin.…”

Section: Other Applicationsmentioning

confidence: 99%

Silicon Carbide for Novel Quantum Technology Devices

Castelletto¹,

Rosa²,

Johnson³

2015

Advanced Silicon Carbide Devices and Processing

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Silicon carbide (SiC) has recently been investigated as an alternative material to host deep optically active defects suitable for optical and spin quantum bits. This material presents a unique opportunity to realise more advanced quantum-based devices and sensors than currently possible. We will summarise key results revealing the role that defects have played in enabling optical and spin quantum measurements in this material such as single photon emission and optical spin control. The great advantage of SiC lies in its existing and well-developed device processing protocols and the possibilities to integrate these defects in a straightforward manner. There is particular current interest in nanomaterials and nanophotonics in SiC that could, once realised, introduce a new platform for quantum nanophotonics and in general for photonics. We will summarise SiC nanostructures exhibiting optical emission due to multiple polytypic bandgap engineering and deep defects. The combination of nanostructures and in-built paramagnetic defects in SiC could pave the way for future single-particle and single-defect quantum devices and related biomedical sensors with single-molecule sensitivity. We will review relevant classical devices in SiC (photonics crystal cavities, microdiscs) integrated with intrinsic defects. Finally, we will provide an outlook on future sensors that could arise from the integration of paramagnetic defects in SiC nanostructures and devices.Keywords: Silicon carbide deep defects, Paramagnetic properties, Optical-detected magnetic resonance, Single-photon sources IntroductionThe most common and technologically advanced SiC polytypes are 4H-SiC and 6H-SiC with hexagonal structures and 3C-SiC with a zinc-blende crystal structure (cubic). High-quality © 2015 The Author(s). Licensee InTech. This chapter is distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.bulk single-crystal 3C-SiC can be grown epitaxially on different substrates, most notably on silicon. This has led to many exciting devices fabricated with this particular polytype [1]. SiC has a wide bandgap (2.4-3.2 eV depending on the polytype), a high thermal conductivity, the ability to sustain high electric fields before breakdown and the highest maximum current density, making it ideal for high-power electronics [2]. More recently, it has become a notable material in the field of quantum computing and spintronics as several of its intrinsic defects are associated with an electron spin that can be used as quantum bit [3,4]. To enhance solid-state quantum systems scalability, a fully integrated device with quantum control should be built; thus, quantum systems should be part of the material used to fabricate the final device. Other solid-state quantum systems fully integrated into a functional device [5][6][7] operate at cryogenic temperatures (4 K or below),...

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Electrically Driven Spin Resonance in Silicon Carbide Color Centers

Cited by 88 publications

References 41 publications

High-Precision Angle-Resolved Magnetometry with Uniaxial Quantum Centers in Silicon Carbide

High-Precision Angle-Resolved Magnetometry with Uniaxial Quantum Centers in Silicon Carbide

Subharmonic transitions and Bloch-Siegert shift in electrically driven spin resonance

Silicon Carbide for Novel Quantum Technology Devices

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