Electrically pumped random lasers with p-diamond as a hole source

Abstract

Electrically pumped lasing has been one of the most challenging issues for random lasers. Since holes are rare in most semiconductors, hole injection is necessary for electrically pumped lasers. Here in this article, by employing p-type diamond synthesized via a temperature gradient method under high-pressure and high-temperature conditions as a hole source, electrically pumped random lasing has been observed from p-Mg 0.35 Zn 0.65 O∕n-ZnO core-shell nanowire structures. The mechanism for the lasing can be attributed to the recombination of the electrons in the nanowires with the holes injected from the p-type diamond. Fig. 6. Room temperature EL spectra of the p-Mg 0.35 Zn 0.65 O∕ n-ZnO core-shell nanowire heterostructures with p-type diamond as the hole source layer under different injection currents. The inset shows the dependence of the integrated emission intensity of the device on the injection current.

Localized Surface Plasmon Enhanced All‐Inorganic Perovskite Quantum Dot Light‐Emitting Diodes Based on Coaxial Core/Shell Heterojunction Architecture

“…By analyzing our device structure and experimental results, four possible reasons are summarized and listed as follows: (1) In our case, the PeLEDs were designed based on vertically aligned and highly uniform one‐dimensional (1D) ZnO NWs arrays, which are featured with a large surface–volume ratio, implying that the heat generated in the emitting unit could be easily released. (2) The CS structured device architecture differs from the traditional planar structure, in which 1D ZnO NWs core can be regarded as a promising photon guider to increase the light extraction efficiency of the PeLEDs considering the feasible waveguiding properties of NWs; thus the reabsorption effect of photons, which then again accounts for the heating problem, could be effectively suppressed because the emitted light is more likely to escape from the device. (3) The desirable coaxial CS heterojunction architecture, with a special geometric morphology, provides more a chance for a fully protection of vulnerable perovskite active layer from exposure to air ambient than the standard planar structure, thereby stabilizing the device operation.…”

Hole-Injection Layer-Free Perovskite Light-Emitting Diodes

“…The dielectric MgO layer could not sustain as the voltage applied on MgO reaches and exceeds its critical breakdown electrical field. Therefore, the selection of dielectric material is essential and deserves more attention not only for a lowered turn-on voltage, but also for device operation under a high excitation level without premature breakdown …”

Homoepitaxial ZnO/ZnMgO Laser Structures and Their Properties

“…[ 18 ] There are also similar reports about the electrically pumped random lasers based on n‐ZnO/p‐MgZnO core–shell nanowire heterostructures [ 19 ] or the electrically pumped random lasers with p‐diamond as a hole source. [ 20 ]…”