Homoepitaxial ZnO/ZnMgO Laser Structures and Their Properties

Abstract

Herein, the optically induced operation of ZnO‐based laser structures is reported, fabricated with plasma‐assisted molecular beam epitaxy (PA‐MBE) on native ZnO substrate. ZnMgO is used both to confine the optical mode within ZnO waveguide and to form quantum barriers of ZnO quantum wells. The resonator of these devices is defined by reactive ion etching (RIE) with a chlorine/argon plasma. The lowest laser threshold is measured to be approximately 0.4 MW cm−2 at room temperature when excited via the third harmonic of a YAG:Nd (355 nm). It is observed that the mode spacing depends on both the resonator length and the excitation power density, which is explained by introducing plasmonic corrections to the waveguide refractive index.

Preparation of ZnMgO/ZnO heterojunction by magnetron sputtering method

“…At present, ZnMgO/ZnO heterostructures are mainly prepared by MBE [5][6][7] , PLD or MOCVD techniques, and S. Krishnamoorthy [8] et al used PLD epitaxial growth technique to grow ZnMgO/ZnO/ZnMgO double-barrier heterojunction barrier heterojunctions on sapphire c-plane substrates and observed the resonant tunneling effect. Some domestic units have also started to investigate ZnMgO/ZnO heterojunctions.…”