Electrically pumped room temperature CW VCSELs with 2.3 µm emission wavelength

Ortsiefer, M.; Böhm, G.; Grau, M.; Windhorn, K.; Rönneberg, E.; Rosskopf, J.; Shau, R.; Dier, O.; Amann, M.-C.

doi:10.1049/el:20061096

Cited by 52 publications

(23 citation statements)

References 5 publications

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“…In fact, the leading technology for EP-VCSELs emitting near 2 µm is currently the InP-based one. Owing to the use of the AlGaInAs/InP material system for Bragg mirrors and the development of BuriedTunnel-Junctions, high performance EP-VCSELs operating in the CW regime at room temperature around 2.01 µm [13] and more recently up to 2.3 µm [14] have been fabricated. However, the latter wavelength appears as the critical high limit which can be obtained with the InP based material system.…”

Section: Gasb Substratementioning

confidence: 99%

Room temperature Sb‐based mid‐infrared VCSELs

Genty

Cerutti

Garnache

et al. 2007

Phys. Status Solidi (c)

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The fabrication and the characterization of Sb-based Mid-Infrared emitting VCSELs are described in this paper. Both external-cavity and microcavity optically-pumped devices exhibit very high performances particularly well-adapted for trace gas detection by laser spectroscopy. Concerning electrically-pumped Sb-based VCSELs, the first results obtained with an hybrid dielectric-semiconductor structure are presented. However, such devices remain less mature than similar optically-pumped laser and only microcavity-enhanced electroluminescence could be observed near 2.3 µm at room temperature. 1 Introduction Semiconductor laser diodes emitting in the Mid-Infrared (MIR) wavelength range are being extensively developed because of the wide range of applications they allow. A number applications, such as high-resolution trace gas detection by laser spectroscopy, free-space optical communications, military counter-measure systems or highly precise surgery, require compact and reliable MIR laser sources with low power consumption and high output emission spectral quality. In particular, the MIR wavelength range contains strong absorption lines of such atmospheric pollutants as CH 4 , CO, NO 2 and H 2 CO while the CO 2 and H 2 O absorptions stay very low. Laser sources are particularly well-adapted for molecular spectroscopy because their emission bands are narrower than the Doppler widths of absorption lines. For trace gas measurement by tunable diode laser absorption spectroscopy (TDLAS), or another more sensitive techniques such as Cavity Ring-Down Spectroscopy (CRDS), laser sources must operate in a very reliable single frequency regime, with a few mW of output power, a sufficiently wide wavelength tunability without mode hoping, and preferably in the continuous wave (CW) regime and at room temperature (RT). Edge-emitting Sb-based laser diodes have already been demonstrated to be efficient sources for gas detection in the mid-infrared range [1]. However, when considering this kind of devices, only Distributed Feed Back (DFB) laser diodes, which need a very heavy and high-cost postgrowth technologic treatment, exhibit output beam spectral qualities adapted for gas detection by laser spectroscopy [2]. However, the output beam of DFB laser devices, due to its edge-emitting characteristics, is highly divergent far from the diffraction limit and so unadapted for commercial optics. For several years, Vertical Cavity Surface Emitting Lasers (VCSELs) devices appear as particularly well-adapted laser sources for gas detection. Since the beginning of the 2000 th years, several published works have shown that these devices offer a variety of advantages for absorption spectroscopy [3]. Moreover, when considering the vertical-external-cavity surface-emitting laser (VECSEL) devices, which combine in itself the edge-emitting diode laser's capability of high output power with the excellent beam quality of a conventional vertical-cavity surface-emitting laser, such a laser source is now considered as ideal for

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Section: Gasb Substratementioning

confidence: 99%

Room temperature Sb‐based mid‐infrared VCSELs

Genty

Cerutti

Garnache

et al. 2007

Phys. Status Solidi (c)

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“…[1][2][3][4] Much research has been done on InP-and GaSb-based VCSELs emitting in the near-infrared (NIR) and MWIR range. [5][6][7][8] While InP-based heterostructures have shown an emission wavelength limit up to 2.3 lm, 9 GaSb-based heterostructures allow coverage of a major part of the 2-4 lm range. Typical VCSELs use high-reflectivity mirrors, usually in the form of distributed Bragg reflectors (DBRs).…”

Section: Introductionmentioning

confidence: 99%

“…11)], which is significantly higher than that of other widely used DBRs in the MWIR range, as shown in Table I. 9,10,[12][13][14] It was previously demonstrated that the ZnTe/GaSb DBRs could achieve a peak reflectivity of 99.0% centered at 2.5 lm with 480-nm-wide stopband. 10 In this paper, the growth of ZnTe/GaSb DBRs using molecular beam epitaxy (MBE) is described.…”

Section: Introductionmentioning

confidence: 99%

Molecular beam epitaxial growth of high-reflectivity and broad-bandwidth ZnTe/GaSb distributed Bragg reflectors

Fan

Liu

Ouyang

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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This paper reports the molecular beam epitaxial growth and characterization of high-reflectivity and broad-bandwidth distributed Bragg reflectors (DBRs) made of ZnTe/GaSb quarter-wavelength (k/4) layers for optoelectronic applications in the midwave infrared spectral range (2-5 lm). A series of ZnTe/GaSb DBRs has been successfully grown on GaSb (001) substrates using molecular beam epitaxy (MBE). During the MBE growth, a temperature ramp was applied to the initial growth of GaSb layers on ZnTe to protect the ZnTe underneath from damage due to thermal evaporation. Post-growth characterization using high-resolution x-ray diffraction, atomic force microscopy, and transmission electron microscopy reveals smooth surface morphology, low defect density, and coherent interfaces. Reflectance spectroscopy results show that a DBR sample of seven k/4 pairs has a peak reflectance as high as 99.0% centered at 2.56 lm with a bandwidth of 517 nm.

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“…This refractive index contrast is significantly higher than those of InGaAs/InAlAs (Dn ¼ 0.27) and AlAsSb/GaSb (Dn ¼ 0.6), which have been widely used for DBRs in VCSELs emitting in the MWIR spectral range. 9,16 As a result, DBR structures consisting of ZnTe and GaSb can provide very high reflectivity with significantly fewer pairs of quarter-wavelength (k/4) layers. Consequently, the overall thicknesses of DBR structures can be greatly reduced.…”

mentioning

confidence: 99%