Electro-optic effect in GaN/Al0.15 Ga0.85N single quantum wells for optical switch

Abstract

The second-harmonic generation (SHG) susceptibility of wurtzite type gallium nitride with single quantum wells has been theoretically investigated in the framework of the compact-density-matrix approach. The confined wave functions and energies of electrons in GaN/Al x Ga 1-x N have been calculated in the effective-mass approximation, solving the Schrödinger equation by Numerov's method using the second and fourth order approximations for the derivatives. The numerical results for typical GaN/Al 0.15 Ga 0.85 N quantum wells show that a strong SHG effect can be realized in electric field by choosing some optimized structural parameters.