Nonlinear optical properties in the laser-dressed two-level AlxGa1−xN/GaN single quantum well

Panda, Monalisa; Das, T. P.; Panda, B. K.

doi:10.1142/s0217979218500327

Cited by 18 publications

(8 citation statements)

References 38 publications

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“…In the dipole approximation

\vec{A} true(t true) = A_{0} \cos true(Ω t true) \hat{z}

, where A 0 is the amplitude of the vector potential. By applying the high‐frequency Floquet theory, the Schrödinger equation for the laser‐dressed effective mass and QW is obtained as

\begin{array}{r} center & - [\frac{ℏ^{2}}{2 m (z, α_{0})}] \frac{d^{2} ψ (z)}{d z^{2}} - \frac{d}{d z} [\frac{ℏ^{2}}{2 m (z, α_{0})}] \frac{d ψ (z)}{d z} \\ center \end{array} + V true(z, α_{0} true) ψ true(z true) = E ψ true(z true)

where the laser‐dressing parameter is defined as

α_{0} = e A_{0} / true(m true(0 true) Ω true)

. Here m (0) is the GaAs effective mass, that is, the effective mass with Equation doing

z = 0

.…”

Section: Theoretical Frameworkmentioning

confidence: 99%

“…Here m (0) is the GaAs effective mass, that is, the effective mass with Equation doing

z = 0

. The laser dressed confinement potential is obtained as

V true(z,, α_{0} true) = \frac{1}{2 π} \int_{0}^{2 π} V true(z + α_{0} \frac{m true(0 true)}{m true(z true)} \sin θ true) d θ

…”

Section: Theoretical Frameworkmentioning

confidence: 99%

“…In the dipole approximationÃ t ð Þ ¼ A 0 cos Ωt ð Þẑ, where A 0 is the amplitude of the vector potential. By applying the high-frequency Floquet theory, [64] the Schrödinger equation for the laser-dressed effective mass and QW is obtained as [54,55]…”

Section: Theoretical Frameworkmentioning

confidence: 99%

“…Here m(0) is the GaAs effective mass, that is, the effective mass with Equation (3) doing z ¼ 0. The laser dressed confinement potential is obtained as [54,55]…”

Section: Theoretical Frameworkmentioning

confidence: 99%

“…Recently, the effect of PDM on the nonlinear optical properties in a GaAs/AlAs semiconductor QW was intensively studied by Li et al Their results show that electron PDM has a significant impact on the electronic and nonlinear optical properties of the system. In other studies, Pradhan et al have considered the effect of the ILF irradiation on the electronic structure of a single QW, whilst Panda et al have calculated the electronic states in the laser‐dressed hexagonal and cubic single QWs using the effective mass equation. In both of these works, the PDM is taken into consideration and it has been found that the effect of the dressed PDM on the electronic and optical properties is significant.…”

Section: Introductionmentioning

confidence: 99%

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Effect of Intense Laser Field in Gaussian Quantum Well With Position‐Dependent Effective Mass

Sarı

Kasapoğlu

Şakiroğlu

et al. 2019

Physica Status Solidi (b)

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In this paper, the effects of the intense laser field (ILF) and position dependent mass (PDM) on the electronic structure in a Gaussian quantum well are theoretically deduced by using the diagonalization method for obtaining energy levels and corresponding wave functions. We find that, in the case of narrow PDM distribution, the dependence of the energy levels on the effective length of the electron mass distribution becomes more apparent, and the evolution of the dressed mass with ILF is significant. Given this feature, it is more meaningful to take into consideration the PDM of the electron in the low dimensional semiconductor heterostructures under the ILF.

show abstract

“…In the dipole approximation

\vec{A} true(t true) = A_{0} \cos true(Ω t true) \hat{z}

, where A 0 is the amplitude of the vector potential. By applying the high‐frequency Floquet theory, the Schrödinger equation for the laser‐dressed effective mass and QW is obtained as

\begin{array}{r} center & - [\frac{ℏ^{2}}{2 m (z, α_{0})}] \frac{d^{2} ψ (z)}{d z^{2}} - \frac{d}{d z} [\frac{ℏ^{2}}{2 m (z, α_{0})}] \frac{d ψ (z)}{d z} \\ center \end{array} + V true(z, α_{0} true) ψ true(z true) = E ψ true(z true)

where the laser‐dressing parameter is defined as

α_{0} = e A_{0} / true(m true(0 true) Ω true)

. Here m (0) is the GaAs effective mass, that is, the effective mass with Equation doing

z = 0

.…”

Section: Theoretical Frameworkmentioning

confidence: 99%

“…Here m (0) is the GaAs effective mass, that is, the effective mass with Equation doing

z = 0

. The laser dressed confinement potential is obtained as

V true(z,, α_{0} true) = \frac{1}{2 π} \int_{0}^{2 π} V true(z + α_{0} \frac{m true(0 true)}{m true(z true)} \sin θ true) d θ

…”

Section: Theoretical Frameworkmentioning

confidence: 99%

Section: Theoretical Frameworkmentioning

confidence: 99%

“…Here m(0) is the GaAs effective mass, that is, the effective mass with Equation (3) doing z ¼ 0. The laser dressed confinement potential is obtained as [54,55]…”

Section: Theoretical Frameworkmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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