Electro-optic exciton nonlinearities inZn1−xCd

Spontaneous polarization and piezoelectric field inGaN/Al0.15GaCingolani1, Botchkarev2, Tang3 et al. 2000Phys. Rev. BSelf Cite18221060View full textAdd to dashboardCite

“…As a matter of comparison, we know from the II-VI Zn x Cd 1Ϫx Se/ZnSe quantum wells that the exciton binding energy ranges around 30-40 meV for typical well widths of 3-4 nm and Cd content of approximately 0.2-0.3. In this material system, we have already shown experimentally and theoretically 15 that the exciton oscillator strength and binding energies are dramatically reduced by electric fields well below 100 kV/cm. By analogy, we thus expect that the strength of the built-in field ͑MV/cm͒ can seriously affect the exciton stability of GaN quantum wells.…”

Many-body effects on excitons properties in GaN/AlGaN quantum wells

“…which is computed numerically by using the wave functions of the electron and the hole along the z-axis ͓ e,h (z)͔. The model was tested on II-V and III-V positive-intrinsicnegative structures, 16,17 giving results for the exciton binding energy and oscillator strength in excellent agreement with the experimental data.…”

Inverted optical phonons in II–VI semiconducting compounds

“…Solid solution systems like ${\rm Zn}_{1 - x} {\rm Cd}_x {\rm S}$ , ${\rm Zn}_{1 - x} {\rm Cd}_x {\rm Se}$ , ${\rm Zn}_{1 - x} {\rm Cd}_x {\rm Te}$ , ${\rm ZnSe}_x {\rm S}_{1 - x}$ hold much promise for practical applications, in particular in optoelectronics, due to their unusual physical properties. Structures with quantum wells 1 and quantum dots 2 based on thin layers of these materials, which are candidates for light sources in the blue spectral region, were formed and investigated. Chromium‐doped crystals of these materials have proven to show promise for making femtosecond lasers in the near‐infrared (IR) region ($\lambda \approx 2.5 \div 3.5\,\mu m$ ) 3, 4.…”