Electro-optical effect in aluminum nitride waveguides

Gräupner, Paul; Pommier, Jean-Claude; Cachard, A.; Coutaz, Jean‐Louis

doi:10.1063/1.350844

Cited by 48 publications

(31 citation statements)

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“…These theoretical values are all less than the measured values of 3.68 and 3.95 pm/V. Moreover, the measured γ 41 of the cBN crystal is also larger than the linear EO coefficients of GaN [15] , AlN [16] , GaP, and GaAs. These EO coefficients are listed and compared in Table 2.…”

Section: -2mentioning

confidence: 41%

“…AlN C6V γ13 = 0.67, γ33 = −0.59 [16] GaN C 6V γ 13 = 0.57 ± 0.11, γ 33 = 1.91 ± 0.35 [15] GaP T d γ41 = 0.97 [14] GaAs T d γ 41 = 1.6 [14] very promising EO material. In addition, the measuring method of the linear EO coefficient adopted in this letter is very convenient and feasible as it is unnecessary to measure the absolute intensity of the probing beam.…”

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confidence: 99%

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Measurement of the linear electro-optic tensor of cubic boron nitride single crystals

Wang¹,

Jia²,

Liu³

et al. 2012

中国光学快报

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The transverse electro-optic (EO) modulation system is built based on cubic boron nitride (cBN) single crystals unintentionally doped and synthesized at a high pressure and high temperature. The photoelectric output of the system includes two parts that can be measured respectively and the value of elements in the linear EO tensor of the cBN crystal can be obtained. This method does not need to measure the absolute light intensity. All of the surfaces of the tiny cBN crystals whose hardness is next to the hardest diamonds are {111} planes. The rectangular parallelepiped cBN samples are obtained by cleaving along {110} planes and subsequently grinding and polishing {112} planes of the tiny octahedral cBN flakes. Three identical non-zero elements of the EO tensor of the cBN crystal are measured via two sample configurations, and the measured results are very close, about 3.68 and 3.95 pm/V, respectively, which are larger than the linear EO coefficients of the general III-V compounds.OCIS codes: 160.2100, 160.4760, 190.4400, 190.4720. doi: 10.3788/COL201210.041602. Cubic boron nitride (cBN) has a zinc blend structure and belongs to the T d point group; thus, it possesses the linear electro-optic (EO) effect. Its EO tensor possesses only three identical non-zero elements, namely, γ 41 = γ 52 = γ 63 . The bandgap of cBN is about 6.3 eV [1−3] , which is the widest among the III-V compounds. Therefore, cBN is transparent in throughout the visible range and most of the infrared and ultraviolet spectra; it can also operate in the wide spectral range as the EO material. Furthermore, cBN has a very high laser damage threshold, meaning it can withstand high-power pulsed or continuous-wave (CW) laser beams. Thus, cBN has potential EO applications. The determination of the EO coefficients of cBN crystals is a prerequisite not only for the EO applications, but also for other studies (e.g., for the study of Raman efficiency of cBN [4] and for the propagation control of the surface wave generated from the interface between the cBN crystal and other isotropic medium [5] ). Some different theoretical results of the EO tensor of the cBN crystals have been reported [6−8] , but these results were only evaluated based on the secondorder non-linear susceptibility χ (2) (−2ω, ω, ω), which is related to the second harmonic generation. In fact, the linear EO coefficient γ 41 (ω) should be obtained based on χ (2) (−ω, ω, 0), which is relevant to the linear EO effect and optical rectification. Because of the frequency dispersion of the second-order non-linear susceptibility, χ (2) (−2ω, ω, ω) = χ (2) (−ω, ω, 0); that is, the accurate value of γ 41 (ω) should come from the experiments of the linear EO effect or optical rectification. Unfortunately, very few reports [9] have yet examined the experimental value of γ 41 of cBN crystals. The main obstacles may include the difficulties of synthesizing the high-quality large cBN crystals and fabricating cBN crystals into suitable rectangular parallelepiped samples because of the second highe...

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Section: -2mentioning

confidence: 41%

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confidence: 99%

Measurement of the linear electro-optic tensor of cubic boron nitride single crystals

Wang¹,

Jia²,

Liu³

et al. 2012

中国光学快报

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“…AlN has been used for second harmonic generation (SHG) and electro-optic devices based on its χ (2) effect (d 33 = 1-3 × 10 −23 C/V 2 ) [33][34][35][36][37][38]. Unlike SiN or SiO2, AlN has both second (χ (2) ) and third order (χ (3) ) optical nonlinearities due to its non-centrosymmetric crystal structure.…”

Section: Introductionmentioning

confidence: 99%

Aluminum nitride as nonlinear optical material for on-chip frequency comb generation and frequency conversion

Jung

Tang

2016

Nanophotonics

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A number of dielectric materials have been employed for on-chip frequency comb generation. Silicon based dielectrics such as silicon dioxide (SiO 2 ) and silicon nitride (SiN) are particularly attractive comb materials due to their low optical loss and maturity in nanofabrication. They offer third-order Kerr nonlinearity (χ (3) ), but little second-order Pockels (χ (2) ) effect. Materials possessing both strong χ (2) and χ (3) are desired to enable selfreferenced frequency combs and active control of comb generation. In this review, we introduce another CMOScompatible comb material, aluminum nitride (AlN), which offers both second and third order nonlinearities. A review of the advantages of AlN as linear and nonlinear optical material will be provided, and fabrication techniques of low loss AlN waveguides from the visible to infrared (IR) region will be discussed. We will then show the frequency comb generation including IR, red, and green combs in high-Q AlN micro-rings from single CW IR laser input via combination of Kerr and Pockels nonlinearity. Finally, the fast speed on-off switching of frequency comb using the Pockels effect of AlN will be shown, which further enriches the applications of the frequency comb.

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“…Porém seu estreito bandgap (1,4ev) dificulta sua aplicação em comprimentos de onda de luz no visível devido ao efeito de portadores livres (Adachi et al, 1993). Um outro material que tem sido bastante utilizado como modulador óptico, devido a suas propriedades ópticas e mecânicas, é o niobatio de lítio (LiNbO3) (Lawrence, 1993) (Chen, Wood e Reano, 2013) (Guarino et al, 2007) (Chen et al, 2014), que possui um coeficiente eletro-óptico alto (r33=33pm/V); no entanto o LiNbO3 precisa de um processo de fabricação complexo e pouco compatível com a tecnologia CMOS (Weigel et al, 2016 (Gräupner et al, 1992), fazendo dele um bom candidato para ser utilizado em circuitos opto-mecânicos.…”

Section: Guias De Onda Utilizando Alnunclassified

“…Outro fator muito relevante do AlN é que apresenta birrefringência (Yamashita et al, 1979) e efeito eletro-óptico (r33, r13~1 pm/V) (Gräupner et al, 1992). A birrefringência (Shokhovets et al, 2003) é uma característica física do meio por onde a luz se propaga e está fundamentada nas mudanças do índice de refração com os diferentes modos de propagação (transversal e longitudinal).…”

Section: Capítulo 1 -Introduçãounclassified

Produção e caracterização de filmes de nitreto de alumínio e sua aplicação em guias de onda tipo pedestal.

Alvarado¹,

Elisia²

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Electro-optical effect in aluminum nitride waveguides

Abstract: We fabricated thin optical layers in aluminum nitride by magnetron sputtering. Using the techniques of integrated optics, we characterized the layers and we determined the electro-optic coefficients of AlN: r13 = 0.67 pm/V and r33 = −0.59 pm/V.

Cited by 48 publications

References 8 publications

Measurement of the linear electro-optic tensor of cubic boron nitride single crystals

Measurement of the linear electro-optic tensor of cubic boron nitride single crystals

Aluminum nitride as nonlinear optical material for on-chip frequency comb generation and frequency conversion

Produção e caracterização de filmes de nitreto de alumínio e sua aplicação em guias de onda tipo pedestal.

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