Electroabsorption studies on InGaAs/InGaAsP quantum-well laser structures

Satzke, K.; Vestner, H. G.; Weiser, G.; Goldstein, Leon J.; Perales, A.

doi:10.1063/1.347543

Cited by 27 publications

(3 citation statements)

References 23 publications

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“…The electric field varies in the range of 10 7 −10 8 V m −1 in our case of applied bias (1-12 V). The change of the bandgap ∆W exp (E) with the electric internal field E is described by Franz-Keldysh effect [30]…”

Section: Resultsmentioning

confidence: 99%

The electroluminescent properties based on bias polarity of the epitaxial graphene/aluminium SiC junction

Rejhon¹,

Franc²,

Dědič³

et al. 2018

J. Phys. D: Appl. Phys.

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We investigated the electroluminescent properties of the epitaxial graphene/SiC junction. The temperature and current dependence of electroluminescence from the epitaxial graphene/SiC is measured within a temperature range of 50-300 K. The result of electroluminescence at 300 K is compared with the electroluminescent spectra from aluminium/SiC junction. The difference between the spectra is explained by the different band bending, which could lead to the tunable LED due to the semi-metal character of the graphene. We observed the electroluminescence at both bias polarities and we described the blue shift in the spectra by Franz-Keldysh effect.

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Section: Resultsmentioning

confidence: 99%

The electroluminescent properties based on bias polarity of the epitaxial graphene/aluminium SiC junction

Rejhon¹,

Franc²,

Dědič³

et al. 2018

J. Phys. D: Appl. Phys.

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“…In Section 5.1, we discuss the suitability of photomodulated reflectance investigations for the characterization of quantum‐well structures; here we employ the electroabsorption method which is an adequate modulation technique as well. Experimentally, a square wave voltage is applied to the sample while the field‐induced change in absorption is measured 72. In order to analyze and interpret the resulting spectra which are nontrivial in general, we calculate absorption spectra for two different electric fields applied in growth directions.…”

Section: Ga(assb)‐based Emitters At 13 µMmentioning

confidence: 99%

Quantum modeling of semiconductor gain materials and vertical‐external‐cavity surface‐emitting laser systems

Bückers

Kühn

Schlichenmaier

et al. 2010

Physica Status Solidi (b)

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This version is available at https://strathprints.strath.ac.uk/35896/ Strathprints is designed to allow users to access the research output of the University of Strathclyde. Unless otherwise explicitly stated on the manuscript, Copyright © and Moral Rights for the papers on this site are retained by the individual authors and/or other copyright owners. Please check the manuscript for details of any other licences that may have been applied. You may not engage in further distribution of the material for any profitmaking activities or any commercial gain. You may freely distribute both the url (https://strathprints.strath.ac.uk/) and the content of this paper for research or private study, educational, or not-for-profit purposes without prior permission or charge.Any correspondence concerning this service should be sent to the Strathprints administrator: strathprints@strath.ac.ukThe Strathprints institutional repository (https://strathprints.strath.ac.uk) is a digital archive of University of Strathclyde research outputs. It has been developed to disseminate open access research outputs, expose data about those outputs, and enable the management and persistent access to Strathclyde's intellectual output. This article gives an overview of the microscopic theory used to quantitatively model a wide range of semiconductor laser gain materials. As a snapshot of the current state of research, applications to a variety of actual quantum-well systems are presented. Detailed theoryexperiment comparisons are shown and it is analysed how the theory can be used to extract poorly known material parameters. The intrinsic laser loss processes due to radiative and non-radiative Auger recombination are evaluated microscopically.The results are used for realistic simulations of verticalexternal-cavity surface-emitting laser systems. To account for nonequilibrium effects, a simplified model is presented using pre-computed microscopic scattering and dephasing rates. Prominent deviations from quasi-equilibrium carrier distributions are obtained under strong in-well pumping conditions.

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“…The set-up for the electroabsorption (EA) experiments on the laser structures is described in Ref. [11].…”

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confidence: 99%

Correlation between lasing properties and band alignment of edge emitting lasers with (Ga,In)(N,As)/Ga(N,As) active regions

Grüning

Klar

Heimbrodt

et al. 2003

Physica Status Solidi (b)

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We have investigated the optical properties of edge-emitting laser structures containing three Ga 0.7 In 0.3 N 0.005 As 0.995 quantum wells embedded in GaN x As 1-x barriers grown by metal-organic vapour-phase epitaxy. In a series of three samples the nitrogen content x of the barrier was varied from 0% to 3%. We studied the optical transitions using pressure-dependent photomodulated reflectance (PR) up to 20 kbar at room temperature. Additionally we measured the pressure dependence of the lasing energy and the threshold current of the corresponding laser structures as function of hydrostatic pressure. Due to the large redshift of the Ga(N,As) band gap with increasing N of about 150 meV per percent N, the variation of x leads to a considerable change of the carrier confinement particularly of electrons. The strong increase of the threshold current of the laser device with pressure suggests a swiftly increasing threshold carrier density due to the increasing effective mass and non-parabolicity. Comparing the pressure dependence of the lasing energy and the conduction band edge supports this conclusion.

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Electroabsorption studies on InGaAs/InGaAsP quantum-well laser structures

Cited by 27 publications

References 23 publications

The electroluminescent properties based on bias polarity of the epitaxial graphene/aluminium SiC junction

The electroluminescent properties based on bias polarity of the epitaxial graphene/aluminium SiC junction

Quantum modeling of semiconductor gain materials and vertical‐external‐cavity surface‐emitting laser systems

Correlation between lasing properties and band alignment of edge emitting lasers with (Ga,In)(N,As)/Ga(N,As) active regions

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