Electrochemical capacitance voltage measurements in highly doped silicon and silicon-germanium alloys

Sermage, B.; Essa, Z.; Taleb, N.; Quillec, M.; Aubin, J.; Hartmann, Jean‐Michel; Veillerot, M.

doi:10.1063/1.4946890

Cited by 22 publications

(14 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The equipment uses a double modulation to measure the capacitance C of the Schottky junction and its derivative dC/dV. The doping concentration N at the edge of the SCR is given by [7,11,12]:…”

Section: Ecvp Measurement Detailsmentioning

confidence: 99%

Doping profile measurement on textured silicon surface

Essa¹,

Taleb²,

Sermage³

et al. 2018

EPJ Photovolt.

View full text Add to dashboard Cite

In crystalline silicon solar cells, the front surface is textured in order to lower the reflection of the incident light and increase the efficiency of the cell. This texturing whose dimensions are a few micrometers wide and high, often makes it difficult to determine the doping profile measurement. We have measured by secondary ion mass spectrometry (SIMS) and electrochemical capacitance voltage profiling the doping profile of implanted phosphorus in alkaline textured and in polished monocrystalline silicon wafers. The paper shows that SIMS gives accurate results provided the primary ion impact angle is small enough. Moreover, the comparison between these two techniques gives an estimation of the concentration of electrically inactive phosphorus atoms.

show abstract

Section: Ecvp Measurement Detailsmentioning

confidence: 99%

Doping profile measurement on textured silicon surface

Essa¹,

Taleb²,

Sermage³

et al. 2018

EPJ Photovolt.

View full text Add to dashboard Cite

show abstract

“…As seen in Fig. 6, C -2 versus V shows a nonlinear behavior, this can be explained by several reasons such as the oxidation of the samples, the lack of interfaces, the tunnel effect or the presence of deep acceptors [22]. Moreover, this nonlinear 1/C 2 curves means that the carrier concentration will not be constant at the depletion layer.…”

Section: N = (mentioning

confidence: 94%

Electrical Properties of Silicon Nanowires Schottky Barriers Prepared by MACE at Different Etching Time

Rouis

Hizem

Hassen

et al. 2021

Preprint

View full text Add to dashboard Cite

This article focused on the electrical characterization of silicon nanowires Schottky barriers following structural analysis of nanowires grown on p-type silicon by Metal (Ag) Assisted Chemical Etching (MACE) method distinguished by their different etching time (5min, 10min, 25min). The SiNWs are well aligned and distributed almost uniformly over the surface of a silicon wafer. In order to enable electrical measurement on the silicon nanowires device, Schottky barriers were performed by depositing Al on the vertically aligned SiNWs arrays. The electrical properties of the resulting Al/SiNWs diodes were characterized by current voltage (I-V) and capacity voltage (C-V) measurements. Unlike the conventional Schottky diode, symmetrical current-voltage (I-V) characteristics have been observed with a rectification ratio < 4. The metal-semiconductor-metal (M-S-M) model was used to analyze the (I-V) characteristics by including two Schottky barriers at the interface between metal and SiNWs. The electron transport behavior is explained by the thermionic field emission method (TFE) which added the effect of the tunneling current compared to the conventional thermionic emission theory. The capacitance-voltage C-V characteristics of SiNWs depend on the bias voltage showing that the samples have an obvious space charge region. Symmetric behavior also appears in the C –V curves that confirm the MSM model.

show abstract

“…ECV is commonly used to determine the doping level in group IV semiconductors (Si, Ge, SiGe) as well as in III-V compound semiconductors. 20 In contrast to secondary ion mass spectrometry (SIMS), ECV provides a depth profile of electrically active dopants. Moreover, different dopants in Ge or Si can also be detected through Raman spectroscopy by measuring the local vibrational phonon mode and Fano effect.…”

Section: Introductionmentioning

confidence: 99%

Nanoscale n++-p junction formation in GeOI probed by tip-enhanced Raman spectroscopy and conductive atomic force microscopy

Prucnal

Berencén

Wang

et al. 2019

Journal of Applied Physics

View full text Add to dashboard Cite

Ge-on-Si and Ge-on-insulator (GeOI) are the most promising materials for the next-generation nanoelectronics that can be fully integrated with silicon technology. To this day, the fabrication of Ge-based transistors with a n-type channel doping above 5 × 10 19 cm −3 remains challenging. Here, we report on n-type doping of Ge beyond the equilibrium solubility limit (n e ≈ 6 × 10 20 cm −3 ) together with a nanoscale technique to inspect the dopant distribution in n ++ -p junctions in GeOI. The n ++ layer in Ge is realized by P + ion implantation followed by millisecond-flashlamp annealing. The electron concentration is found to be three times higher than the equilibrium solid solubility limit of P in Ge determined at 800°C. The millisecond-flashlamp annealing process is used for the electrical activation of the implanted P dopant and to fully suppress its diffusion. The study of the P activation and distribution in implanted GeOI relies on the combination of Raman spectroscopy, conductive atomic force microscopy, and secondary ion mass spectrometry. The linear dependence between the Fano asymmetry parameter q and the active carrier concentration makes Raman spectroscopy a powerful tool to study the electrical properties of semiconductors. We also demonstrate the high electrical activation efficiency together with the formation of ohmic contacts through Ni germanidation via a single-step flashlamp annealing process.

show abstract

Electrochemical capacitance voltage measurements in highly doped silicon and silicon-germanium alloys

Cited by 22 publications

References 11 publications

Doping profile measurement on textured silicon surface

Doping profile measurement on textured silicon surface

Electrical Properties of Silicon Nanowires Schottky Barriers Prepared by MACE at Different Etching Time

Nanoscale n++-p junction formation in GeOI probed by tip-enhanced Raman spectroscopy and conductive atomic force microscopy

Contact Info

Product

Resources

About

Electrochemical capacitance voltage measurements in highly doped silicon and silicon-germanium alloys

Cited by 22 publications

References 11 publications

Doping profile measurement on textured silicon surface

Doping profile measurement on textured silicon surface

Electrical Properties of Silicon Nanowires Schottky Barriers Prepared by MACE&nbsp;at Different Etching Time

Nanoscale n++-p junction formation in GeOI probed by tip-enhanced Raman spectroscopy and conductive atomic force microscopy

Contact Info

Product

Resources

About

Electrical Properties of Silicon Nanowires Schottky Barriers Prepared by MACE at Different Etching Time