Electrochemical Characteristics of Silicon-Doped Tin Oxide Thin Films

Lee, Sang‐Heon; Park, Geon Tae; Son, Yeong-Guk

doi:10.3740/mrsk.2002.12.4.240

Cited by 3 publications

(2 citation statements)

References 5 publications

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“…Zink based oxide semiconductors with high mobility must decrease the resistivity and mismatching at the interface between a channel and dielectric material [4][5][6][7][8][9]. Also, the understanding that a contact mechanism at the interface in a device is also an important factor.…”

Section: Introductionmentioning

confidence: 99%

Correlation between the Annealing Effect and the Electrical Characteristics of the Depletion Region in ZnO, SnO₂and ZTO Films

Oh¹

2016

Transactions on Electrical and Electronic Materials

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To research the correlation between oxygen vacancy and the electrical characteristics of ZTO, which is made by using a target mixed ZnO:SnO 2 =1:1, the ZnO, SnO 2 and ZTO were analyzed by PL, XPS, XRD patterns and electrical properties. It was compared with the electron orbital spectra of O 1s in accordance with the electrical characteristics of ZnO, SnO 2 and ZTO. The electrical characteristics of ZTO were improved by increasing the annealing temperatures, due to the high degree of crystal structures at a high temperature, and the physical properties of ZTO was similar to that of ZnO. The amorphous structure of SnO 2 was increased with increasing the temperature. The Schottky contact of oxide semiconductors was formed using the depletion region, which is increased by the electron-hole combination due to the annealing processes. ZnO showed the Ohmic contact in spite of a high annealing temperature, but SnO 2 and ZTO had Schottky contact. As such, it was confirmed that the electrical properties of ZTO are affected by the molecules of SnO 2 .

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Section: Introductionmentioning

confidence: 99%

Correlation between the Annealing Effect and the Electrical Characteristics of the Depletion Region in ZnO, SnO₂and ZTO Films

Oh¹

2016

Transactions on Electrical and Electronic Materials

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“…The physical, chemical and electrical properties of ZTO follow the characteristics of n-type ZnO and p-type SnO 2 . Indium free ZTO has merit for its low production, low resistivity and high mobility, as well as transparency and flexibility [7][8][9][10][11]. The conductivity of zink based on oxide semiconductors usually changes in accordance with ionized carriers such as Zn interstitials (Zn i ), oxygen vacancies (V o ) and oxygen interstitials (O i ).…”

Section: Introductionmentioning

confidence: 99%

A Study on an Oxygen Vacancy and Conductivity of Oxide Thin Films Deposited by RF Magnetron Sputtering and Annealed in a Vacuum

Oh¹

2017

Transactions on Electrical and Electronic Materials

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Usually, the oxygen vacancy is an important factor in an oxide semiconductor device because the conductivity is related to the oxygen vacancy, which is formed at the interface between oxide semiconductors and electrodes with an annealing processes. ZTO is made by mixing n-type ZnO and p-type SnO 2 . Zink tin oxide (ZTO), zink oxide (ZnO) and tin oxide (SnO 2 ) thin films deposited by RF magnetron sputtering and annealed, to generate the oxygen vacancy, were analyzed by XPS spectra. The contents of oxygen vacancy were the highest in ZTO annealed at 150 o C℃ , ZnO annealed at 200 o C and SnO 2 annealed at 100 o C. The current was also increased with increasing the oxygen vacancy ions. The highest content of ZTO oxygen vacancies was obtained when annealed at 150 ℃ . This is the middle level in compared with those of ZnO annealed at 200 o C and SnO 2 annealed at 100 o C℃ . The electrical properties of ZTO followed those of SnO 2 , which acts a an enhancer in the oxide semiconductor.

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A Study on the Chemical Properties of AZO with Crystal Structure and IGZO of Amorphous Structure Due to the Annealing Temperature

So¹,

Song²,

Seo³

et al. 2016

IPR

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Electrochemical Characteristics of Silicon-Doped Tin Oxide Thin Films

Cited by 3 publications

References 5 publications

Correlation between the Annealing Effect and the Electrical Characteristics of the Depletion Region in ZnO, SnO₂and ZTO Films

Correlation between the Annealing Effect and the Electrical Characteristics of the Depletion Region in ZnO, SnO₂and ZTO Films

A Study on an Oxygen Vacancy and Conductivity of Oxide Thin Films Deposited by RF Magnetron Sputtering and Annealed in a Vacuum

A Study on the Chemical Properties of AZO with Crystal Structure and IGZO of Amorphous Structure Due to the Annealing Temperature

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Electrochemical Characteristics of Silicon-Doped Tin Oxide Thin Films

Cited by 3 publications

References 5 publications

Correlation between the Annealing Effect and the Electrical Characteristics of the Depletion Region in ZnO, SnO2and ZTO Films

Correlation between the Annealing Effect and the Electrical Characteristics of the Depletion Region in ZnO, SnO2and ZTO Films

A Study on an Oxygen Vacancy and Conductivity of Oxide Thin Films Deposited by RF Magnetron Sputtering and Annealed in a Vacuum

A Study on the Chemical Properties of AZO with Crystal Structure and IGZO of Amorphous Structure Due to the Annealing Temperature

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Product

Resources

About

Correlation between the Annealing Effect and the Electrical Characteristics of the Depletion Region in ZnO, SnO₂and ZTO Films

Correlation between the Annealing Effect and the Electrical Characteristics of the Depletion Region in ZnO, SnO₂and ZTO Films