The compound AgGaSe 2 has received limited attention as a potential wide gap solar cell material for tandem applications, despite its suitable band gap. This study aims to investigate the potential of this material by deposition of thin films by co-evaporation and production of solar cell devices. Since AgGaSe 2 has a very low tolerance to off-stoichiometry, reference materials of possible secondary phases in the Ag 2 Se−Ga 2 Se 3 system were also produced. Based on these samples, it was concluded that X-ray diffraction is suited to distinguish the phases in this material system. An attempt to use Raman spectroscopy to identify secondary phases was less successful. Devices were produced using absorbers containing the secondary phases likely formed during co-evaporation. When grown under slightly Ag-rich conditions, the Ag 9 GaSe 6 secondary phase was present along with AgGaSe 2 , which resulted in devices being shunted under illumination. When absorbers were grown under Ag-deficient conditions, the AgGa 5 Se 8 secondary phase was observed, making the device behavior dependent on the processing route. Deposition with a three-stage evaporation (Ag-poor, Ag-rich, and Ag-poor) resulted in AgGa 5 Se 8 layers at both front and back surfaces, leading to charge carrier blocking in devices. Deposition of the absorber with a one-stage process, on the other hand, caused the formation of AgGa 5 Se 8 locally extended through the entire film, but no continuous layer was found. As a consequence, these devices were not blocking and achieved an efficiency of up to 5.8%, which is the highest reported to date for AgGaSe 2 solar cells.