Indium sulfide (In 2 S 3 ) thin films have been synthesized by chemical bath deposition technique onto glass substrates using In(NO 3 ) 3 as indium precursor and thioacetamide as sulfur source. X-ray diffraction studies have shown that the crystalline state of the as-prepared and the annealed films is β-In 2 S 3 . Optical band gap values between 2.27 and 2.41 eV were obtained for these films. The In 2 S 3 thin films are photosensitive with an electrical conductivity value in the range of 10, depending on the film preparation conditions. We have demonstrated that the In 2 S 3 thin films obtained in this work are suitable candidates to be used as window layer in thin film solar cells. These films were integrated in SnO 2 :F/In 2 S 3 /Sb 2 S 3 /PbS/C-Ag solar cell structures, which showed an open circuit voltage of 630 mV and a short circuit current density of 0.6 mA/cm 2 .