2008
DOI: 10.1016/j.tsf.2008.03.009
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Electrochemical deposition of indium sulfide thin films using two-step pulse biasing

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Cited by 38 publications
(35 citation statements)
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“…The E g value was determined by extrapolating the linear part of the plot (αhν) 2 vs. (hν) in the abscissa (axis x), which indicates a direct optical transition. The (αhν) 2 vs. (hν) plots are shown in Fig.…”
Section: Optical Properties Of In 2 S 3 Thin Filmsmentioning
confidence: 99%
See 1 more Smart Citation
“…The E g value was determined by extrapolating the linear part of the plot (αhν) 2 vs. (hν) in the abscissa (axis x), which indicates a direct optical transition. The (αhν) 2 vs. (hν) plots are shown in Fig.…”
Section: Optical Properties Of In 2 S 3 Thin Filmsmentioning
confidence: 99%
“…Indium sulfide has been recognized as an alternative material due to their stability, transparency, photoconductive nature and because of the energy band gap that can be varied between 2 and 2.75 eV depending on its composition [1][2][3][4][5][6]. Several crystalline phases have been reported for the In 2 S 3 thin films (α, β and γ) and it has been found that the most stable phase at room temperature is the β-tetragonal [6].…”
Section: Introductionmentioning
confidence: 99%
“…The estimation of the open circuit voltage from the results of the PEC measurements is possible. PEC measurement shows the semiconductor conduction-type and photosensitivity [2][3][4][5][6][7][8][9][10][11].…”
Section: Introductionmentioning
confidence: 99%
“…When a light with certain intensity strikes the semiconductor, a number of the minority carrier is excited to the conduction band and the same number of majority carriers is left behind them in the valence band. However, the photocurrent of a semiconductor is different [2][3][4][5][6][7][8][9][10][11] under anodic and cathodic biases for a certain intensity of light. The important matter is that the PEC measurements of some semiconductors show photocurrent at zero bias potential [2,[5][6][7]11].…”
Section: Introductionmentioning
confidence: 99%
“…In our previous reports, we have deposited InS x O y electrochemically onto indium-doped tin oxide (ITO)-coated glass substrates from an aqueous bath containing 0.01 mol/L of In 2 (SO 4 ) 3 and 0.1 mol/L of Na 2 S 2 O 3 using a two-step-pulse biasing [11]. Due to the instability of ITO in the acidic bath at the cathodic biasing [12], the fluorine-doped tin oxide (FTO)-coated glass was used as a substrate in a separate report [13].…”
Section: Introductionmentioning
confidence: 99%