Indium sulfide thin films as window layer in chemically deposited solar cells

Abstract

Indium sulfide (In 2 S 3 ) thin films have been synthesized by chemical bath deposition technique onto glass substrates using In(NO 3 ) 3 as indium precursor and thioacetamide as sulfur source. X-ray diffraction studies have shown that the crystalline state of the as-prepared and the annealed films is β-In 2 S 3 . Optical band gap values between 2.27 and 2.41 eV were obtained for these films. The In 2 S 3 thin films are photosensitive with an electrical conductivity value in the range of 10, depending on the film preparation conditions. We have demonstrated that the In 2 S 3 thin films obtained in this work are suitable candidates to be used as window layer in thin film solar cells. These films were integrated in SnO 2 :F/In 2 S 3 /Sb 2 S 3 /PbS/C-Ag solar cell structures, which showed an open circuit voltage of 630 mV and a short circuit current density of 0.6 mA/cm 2 .

Effect of thermal annealing on physical properties of vacuum evaporated In2S3 buffer layer for eco-friendly photovoltaic applications

“…The intensity of predominant peak (109) is observed to be relatively high as compared to the other peaks which confirmed the polycrystalline nature with tetragonal phase of the films annealed at 450 1C. This result is well supported with earlier reported work of Shall et al [30], Loredo et al [34] and Barreau et al [35].…”

Annealing and deposition time effects on the structural, optical, and electrical properties of indium sulfide thin films produced by chemical bath deposition method

“…The ρ value of the as-grown and annealed films decreased from 33 Ω cm to 28 Ω cm, as shown in the Table. A reduction in ρ may be due to the increasing film thickness and grain size from ∼18 nm to ∼ 32 nm as confirmed by the SEM pictures ( Figure 2) and listed in the Table. Grain boundary scattering of free electrons in thicker films is less than in thinner films because of larger crystallite sizes. Since ρ is proportional to the electron scattering frequency, γ(1/ρ = N e e 2 /m * e γ), ρ decreases with increasing film thickness [12][13][14]. Moreover, a decrement in 400 600 800 1000 ρ could be attributed to an increment in electron density or mobility [n = 1/qρµ n (where n is the electron density, q is the electronic charge, and µ n is the electron mobility)] [14,15].…”

Important Phase Control of Indium Sulfide Nanomaterials by Choice of Indium(III) Xanthate Precursor and Thermolysis Temperature

“…The indium‐sulfur (In‐S) binary metal chalcogenide system is of interest in the optoelectronics, and catalysis, research fields due to attractive properties such as the variety of crystallographic phases, and band gap of ca. 2 eV .…”

“…These applications have in common the necessity to utilize indium sulfide in its pure phases. The most easily accessed and found phases are InS, In 3 S 4 , In 6 S 7 and In 2 S 3 . Indium sulfide semiconductors are classified as non‐toxic and have potential as an alternative to the toxic cadmium sulfide buffer in cadmium gallium indium selenide/sulfide solar cells .…”