2002
DOI: 10.1016/s0924-4247(02)00385-0
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Electrochemical etching in HF solution for silicon micromachining

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Cited by 103 publications
(58 citation statements)
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“…In a recent work, we demonstrated that the commonly accepted constraints on macropore dimension and pitch (once the resistivity of the silicon substrate is chosen) can be significantly relaxed [9]. In ref.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…In a recent work, we demonstrated that the commonly accepted constraints on macropore dimension and pitch (once the resistivity of the silicon substrate is chosen) can be significantly relaxed [9]. In ref.…”
Section: Resultsmentioning
confidence: 99%
“…In ref. [9] regular pores with sides ranging from 2 µm up to 15 µm and pitch variation up to 100% were fabricated on the same 2.4÷4 Ω·cm silicon substrate. Moreover, we showed that macropore formation is just a feature of photo-electrochemical etching and that by changing the initial pattern it is possible to fabricate a variety of silicon microstructures with more complicated shape [8].…”
Section: Resultsmentioning
confidence: 99%
“…1b). The KOH etching forms full V-grooves in the straight-line area, which are used as initial seeds for silicon trenching by means of the following electrochemical etching step (Barillaro et al 2002b(Barillaro et al , 2008, and a microchannel having trapezoidal section in the squared frame area, which surrounds the V-grooves and is exploited in optofluidic applications for filling all the trenches with suitable liquid. Electrochemical etching in a HF-based solution (HF:H 2 O = 5%:95% by volume, with the addition of 1,000 ppm of Sodium Lauryl Sulfate, SLS, used as surfactant) is properly controlled to produce deep regular trenches in the patterned substrate and, in turn, a vertical, high aspect-ratio silicon/air PhC micromirror (Fig.…”
Section: Optofluidic Sectionmentioning
confidence: 99%
“…Studies of optical characteristics of such photonic crystals showed that they can be successfully used in the mid IR region of the spectrum [2,3]. Later, simi lar structures were obtained using photoelectrochemi cal etching (PECE) of silicon with (100) orientation [4][5][6][7]; previously, this method had been mainly used to obtain a 2D periodic lattice in macroporous silicon [8][9][10]. The advantages of the PECE method as com pared to anisotropic etching consist in the use of a sub strate with the standard (100) orientation, in the absence of a necessity to precisely orient the pattern of the photomask with respect to crystallographic axes, and the possibility of fabricating simultaneously the trenches and macropores in a unified process [11,12].…”
Section: Introductionmentioning
confidence: 99%