Ultrafine bismuth nanowire arrays were synthesized by injecting its liquid melt into nanochannels of a porous anodic alumina template. A large area (1 cm 3 1.5 cm) of parallel wires with diameters as small as 13 nm, lengths of 30-50 mm, and packing density as high as 7.1 3 10 10 cm 22 has been fabricated. X-ray diffraction patterns revealed these nanowires, embedded in the insulating matrix, to be essentially single crystalline and highly oriented. The optical absorption spectra of the nanowire arrays indicate that these bismuth nanowires undergo a semimetal-to-semiconductor transition due to two-dimensional quantum confinement effects.Highly regular metal and semiconductor nanowire arrays embedded in a dielectric matrix have attracted a great deal of research attention because of their potential applications in electronic and optical devices and promise for studying one-dimensional (1D) quantum properties. The quantum confinement of carriers in two dimensions will significantly change their electronic energy states and make the properties of these 1D systems very different from their bulk counterparts. A promising approach to fabricate nanowire systems is to fill an array of nanochannels with the media of interest. Porous anodic alumina, 1-3 which has hexagonally packed nanometer-sized channels, is one such possible host template. Besides its desirable geometry, the wide band gap energy of alumina makes it an excellent host material for quantum wires. Anodic alumina has previously been used to synthesize a variety of metal and semiconductor nanowires, such as Ni, Pd, Au, Pt, and CdS, through chemical or electrochemical processes. [4][5][6][7] However, the diameters of those nanowires have not reached the quantum confinement regime. In order to exhibit strong quantum confinement characteristics, the wire diameter should be smaller than the exciton diameter, which is given by d ex 2eh 2 (m 21 e 1 m 21 h )͞e 2 , where e is the static dielectric constant, and m e and m h are the effective masses of electrons and holes, respectively. Bismuth, which is a semimetal and has a very small electron effective mass (m e ഠ 0.014m 0 at the band edge along a) Author to whom correspondence should be addressed. the trigonal direction, and m e ഠ 0.0036m 0 for heavy electrons along the bisectrix direction), is considered a good candidate to study quantum confinement effects in the 1D system. Our theoretical calculations estimate that Bi makes a transition from a semimetal to a 1D semiconductor at a wire diameter of about 45 nm or 81 nm if the wire is oriented along the trigonal direction or the bisectrix direction, respectively.
8In this paper, Bi quantum-wire arrays were fabricated by a novel vacuum melting and pressure injection technique which can produce continuous, dense nanowire arrays, as required by many practical electronic applications. High-pressure injection of molten metal has been used to fill a single glass nanotube, 9 and more recently, porous anodic alumina having channel diameters larger than 200 nm. 10 The injec...