In this work we present a low cost and scalable technique, via ambient pressure chemical vapor deposition (CVD) on polycrystalline Ni films, to fabricate large area ( approximately cm2) films of single- to few-layer graphene and to transfer the films to nonspecific substrates. These films consist of regions of 1 to approximately 12 graphene layers. Single- or bilayer regions can be up to 20 mum in lateral size. The films are continuous over the entire area and can be patterned lithographically or by prepatterning the underlying Ni film. The transparency, conductivity, and ambipolar transfer characteristics of the films suggest their potential as another materials candidate for electronics and opto-electronic applications.

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Finite graphite systems having a zigzag edge exhibit a special edge state. The corresponding energy bands are almost flat at the Fermi level and thereby give a sharp peak in the density of states. The charge density in the edge state is strongly localized on the zigzag edge sites. No such localized state appears in graphite systems having an armchair edge. By utilizing the graphene ribbon model, we discuss the effect of the system size and edge shape on the special edge state. By varying the width of the graphene ribbons, we find that the nanometer size effect is crucial for determining the relative importance of the edge state. We also have extended the graphene ribbon to have edges of a general shape, which is defined as a mixture of zigzag and armchair sites. Examining the relative importance of the edge state for graphene ribbons with general edges, we find that a non-negligible edge state survives even in graphene ribbons with less developed zigzag edges. We demonstrate that such an edge shape with three or four zigzag sites per sequence is sufficient to show an edge state, when the system size is on a nanometer scale. The special characteristics of the edge state play a large role in determining the density of states near the Fermi level for graphite networks on a nanometer scale. ͓S0163-1829͑96͒11048-1͔

The dimensionless thermoelectric figure of merit (ZT) in bismuth antimony telluride (BiSbTe) bulk alloys has remained around 1 for more than 50 years. We show that a peak ZT of 1.4 at 100 degrees C can be achieved in a p-type nanocrystalline BiSbTe bulk alloy. These nanocrystalline bulk materials were made by hot pressing nanopowders that were ball-milled from crystalline ingots under inert conditions. Electrical transport measurements, coupled with microstructure studies and modeling, show that the ZT improvement is the result of low thermal conductivity caused by the increased phonon scattering by grain boundaries and defects. More importantly, ZT is about 1.2 at room temperature and 0.8 at 250 degrees C, which makes these materials useful for cooling and power generation. Cooling devices that use these materials have produced high-temperature differences of 86 degrees , 106 degrees , and 119 degrees C with hot-side temperatures set at 50 degrees, 100 degrees, and 150 degrees C, respectively. This discovery sets the stage for use of a new nanocomposite approach in developing high-performance low-cost bulk thermoelectric materials.