0.05 Y 0.10 O 3-δ : BCRY) thin film has been prepared on (0001) Al 2 O 3 substrate by RF magnetron sputtering. The BCRY thin film crystallized at 600°C exhibits a-and c-axes orientations. The electrical conductivity of BCRY thin film is higher than that of BaCe 0.90 Y 0.10 O 3-δ (BCY) thin film. The activation energy (E A ) of BCRY thin film is ~0.25 eV, which corresponds to half E A of BCY thin film, below 400°C. The conductivity depends on oxygen partial pressure. The Fermi level (E F ) of BCRY thin film shifts to the conduction band side, although the E F of BCY thin film locates at the valence band side. The above results indicate that the BCRY thin film occurs the electron-ion mixed conductions below 400°C.