2007
DOI: 10.1149/1.2751836
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Electrochemical Impedance Spectroscopy of Dense Silica and Porous Silicon Oxycarbide

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Cited by 9 publications
(9 citation statements)
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“…This parameter is correlated with the surface area exposed to the surrounding environment and, hence, to the through-porosity. In the literature, porosity values have been measured for inorganic layers, such as SiO 2 , Al 2 O 3 , Ta 2 O 5 , and TiN. Härkönen et al reported values down to 0.02% for ultrathin ALD deposited Al 2 O 3 layers, confirmed by the porosity calculated by means of linear scan voltammetry measurements. Tato et al detected porosity values down to 0.08% for thick sputtered TiN layers and compared them with the porosity values calculated with both dc and polarization methods.…”
Section: Introductionmentioning
confidence: 95%
“…This parameter is correlated with the surface area exposed to the surrounding environment and, hence, to the through-porosity. In the literature, porosity values have been measured for inorganic layers, such as SiO 2 , Al 2 O 3 , Ta 2 O 5 , and TiN. Härkönen et al reported values down to 0.02% for ultrathin ALD deposited Al 2 O 3 layers, confirmed by the porosity calculated by means of linear scan voltammetry measurements. Tato et al detected porosity values down to 0.08% for thick sputtered TiN layers and compared them with the porosity values calculated with both dc and polarization methods.…”
Section: Introductionmentioning
confidence: 95%
“…In order to improve the fit and due to the presence of porosity, a constant phase element (CPE) is used to substitute all the system capacitances. A CPE can be defined as ZCPE,layer=1Qlayer(iωfalse)normalα where i is the imaginary number, Q layer is a value independent of frequency, and α is the CPE power, which gives an indication of the layer inhomogeneity/porosity.…”
Section: Resultsmentioning
confidence: 99%
“…However, the EIS measurement highlighted differences in the macro‐scale defect level of the layers (Figure d). A second time constant developed in the Bode plot for the TVTSO‐deposited SiO 2 n 1.446 , which is generally attributed to the formation of an interface between the substrate and the electrolyte solution . To better highlight the differences in the macro‐scale defects content, the permeation of water was followed with EIS, as change of the C layer with the immersion time.…”
Section: Resultsmentioning
confidence: 99%
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